Electrical Engineering

GIULIO DE DONATO

Knowledge and Understanding
Students will acquire a solid understanding of the main semiconductor devices for power electronics, including their operating principles, static and dynamic characteristics, and the differences between conventional and wide-bandgap technologies (Si, SiC, GaN).

Ability to Apply Knowledge and Understanding
Students will be able to analyze and select appropriate power devices for specific converter applications, evaluating performance in terms of losses, switching speed, and thermal limitations.

Autonomy of Judgement
Students will develop the ability to critically compare different device technologies and structures, forming independent judgements on the most suitable choice according to operating conditions and application constraints.

Communication Skills
Students will be able to clearly and rigorously describe the electrical and physical behavior of power devices, using proper technical terminology and supporting their arguments with models and quantitative data.

Learning Skills
Students will acquire the ability to independently keep up to date with advances in power semiconductor technologies by consulting scientific publications and industrial datasheets.

To understand and be able to apply the techniques described in the teaching, it is necessary to have taken the exams in Circuit Theory, Electronics and Electrical Measurements. Some topics in the program require knowledge of Fourier and Laplace series and transforms, as well as mathematical skills. These prerequisites are essential for the student who wants to profitably follow the course.

Review of Semiconductor Devices
Power Diodes: PiN, Schottky, and Merged PiN-Schottky
Thyristor
Silicon Power MOSFET
IGBT
Wide-Bandgap Semiconductor Materials for Power Electronics (SiC and GaN)
SiC Schottky Diode
SiC Power MOSFET
GaN High-Electron-Mobility Transistor (HEMT)

N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics: Converters, Applications, and Design, 3rd ed., Hoboken, NJ: John Wiley & Sons, 2003.

Kassakian, J. G., Perreault, D. J., Verghese, G. C., & Schlecht, M. F., Principles of Power Electronics, 2ª ed., Cambridge University Press, 2023

B. J. Baliga, Fundamentals of Power Semiconductor Devices, 2ª ed., Springer, 2019

B. J. Baliga, "Silicon Carbide Power Devices: Progress and Future Outlook," in IEEE Journal of
Emerging and Selected Topics in Power Electronics, vol. 11, no. 3, pp. 2400-2411, June 2023

Lidow, A., de Rooji, M., Glaser, J., Pozo, A., Zhang, S., Palma, M., Reusch, D., Strydom, J., &, GaN
Transistors for Efficient Power Conversion, 4ª ed., John Wiley & Sons, 2025

B. Zojer, F. Di Domenico, and E. Persson, Operation and Features of High-Voltage CoolGaN™
Transistors, Infineon Technologies Austria AG, White Paper, Version 1.0, Oct. 2024. [Online].
Available: https://www.infineon.com/

V. Veliadis and T. M. Jahns, “Monolithic Bidirectional Lateral GaN Switches Reinvigorate Power
Electronics Applications,” IEEE Power Electronics Magazine, vol. 12, no. 1, pp. 22–28, Mar. 2025,
doi: 10.1109/MPEL.2025.3528696.

K. K. L. Leong and P. Das, CoolGaN™ Bidirectional Switch 650 V G5: Fundamentals and Design
Considerations, Infineon Technologies AG, White Paper, Version 1.1_EN, May 2025. [Online].
Available: https://www.infineon.com/cms/en/product/power/gallium-nitride/gan-bidirectional-switch/hvgan-
bidirectional-switch/

Monolithic Bidirectional Power Transistors, Infineon Technologies AG, White Paper, 2024.

In presence teaching.

the students are advised to follow the lectures.

The exam consists in evaluating a simulation project in PLECS.

any topic explained during the lectures

• Week 1 – Review of semiconductor physics, p–n junction and basic I–V characteristics.
  • Books: Kassakian et al., Principles of Power Electronics, cap. 16 (Review of Semiconductor Devices).


• Week 2 – PiN, Schottky and Merged PiN-Schottky power diodes
  • Books: Mohan et al., Power Electronics, cap. 20 (Power Diodes).


• Week 3 – Thyristor
  • Books: Mohan et al., cap. 23 (Thyristors)


• Week 4 – Silicon power MOSFETs
  • Books: Mohan et al., cap. 22 (Power MOSFETs). Baliga, cap. 6 (Power MOSFETs). Kassakian et al., cap. 17.5–17.6 (Power MOSFET e Superjunction MOSFET).


• Week 5 – Insulated Gate Bipolar Transistors
  • Books: Mohan et al., cap. 25 (Insulated Gate Bipolar Transistors). Baliga, cap. 8 (IGBTs). Kassakian et al., § 17.7 (IGBT).


• Week 6 – Wide-bandgap materials (SiC and GaN): physical properties and Figures of Merit.
  • Books: Baliga, cap. 11 (Materials and Figures of Merit). Baliga (IEEE JESTPE, 2023).


• Week 7 – SiC diodes and MOSFETs
  • Books: Baliga, capp. 12–13 (SiC Diodes e SiC MOSFETs). Baliga (IEEE JESTPE, 2023).


• Week 8 – GaN transistors
  • Books: Lidow et al., GaN Transistors for Efficient Power Conversion, capp. 1–3 (HEMT physics, E-mode/D-mode GaN). Zojer et al., Infineon WP 2024.


• Week 9 –  Monolithic bidirectional switches
  • Books: Veliadis & Jahns, IEEE Power Electronics Magazine, 2025. Leong & Das, Infineon WP 2025. Monolithic Bidirectional Power Transistors, Infineon 2024.


• Week 10 – Dynamic parameters and device models for switching analysis.
  • Books: technical documentation provided by the instructor


• Week 11 – Datasheet interpretation and applications in hard-switching converters.
  • Books: technical documentation provided by the instructor


• Week 12 – Final review and comparison among device families.
  • Books: Consolidated material from all core texts and lecturer’s notes.