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Corsi di Fisica Generale I - Corso di studio in Ingegneria Civile e Ambientale anno accdemico 2019-2020

 

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Office Hours
Lun, Mar, Mer, Gio, Ven 8-20
Professor CV
Curriculum Vitae of Antonio Polimeni


Personal data Born in Rome (Italy) on November 14, 1968

Present Position Associate Professor at the Physics Department, University of Rome La Sapienza .

Address:
Piazzale A. Moro 2, 00185 Roma, Italy
Phone: +39-06-49914770 (office), +39-06-49914385 (lab.)
Fax: +39-06-4957697
E-mail: polimeni@roma1.infn.it


Education and Research Experience

1988 1993 Laurea degree in Physics, 22/7/1993, Physics Department, University of Rome La Sapienza .
Subject:
Optical characterisation of InGaAs/GaAs quantum heterostructures: carrier confinement in barriers and wells
Supervisors: Prof. M. Capizzi, Prof. A. Frova.
Mark: 110/110 cum Laude.

1993 1996 PhD. in Physics, Physics Department, University of Rome La Sapienza .
Subject:
Optical properties of InGaAs/GaAs quantum heterostructures and disorder effects
Supervisor: Prof. M. Capizzi.

1997 1999 Research Assistant in the
Quantum Transport and Spectroscopy of Semiconductors group headed by Prof. L. Eaves
at the School of Physics and Astronomy, Nottingham University, United Kingdom.

1998 1999 Tutor at the School of Physics and Astronomy, Nottingham University, United Kingdom.

November 1999 October 2002 Lecturer at Physics Department, University of Rome La Sapienza .


November 2002 Granted tenure as Lecturer at Physics Department, University of Rome La Sapienza .

November 2010 Associate professorship.

2013 and 2018
National habilitation as Full Professor

Track Record

Antonio Polimeni is Associate Professor in Experimental Physics at Dipartimento di Fisica, Sapienza Università di Roma. He received his PhD in Physics in 1997 and was a post-doctoral Research Associate at the School of Physics and Astronomy, Nottingham University (UK), from 1997 to 1999. He is at Sapienza Università di Roma since 2000. In 2013, he got the national habilitation as Full professor.
His research concerns the electronic properties of semiconductor materials and nanostructures investigated by optical spectroscopy and transport techniques.
During his PhD in Physics in Roma, he investigated the electronic properties of low-dimensional semiconductor heterostructures (quantum wells and dots) by means of photoluminescence (PL) and PL excitation spectroscopy. In particular, he studied the role played by interfacial and alloy disorder on the lineshape of radiative recombination in quantum wells, the effect of atomic hydrogen irradiation on these systems, and the electronic properties of semiconductor quantum dots. From 1997 to 1999, Antonio Polimeni was in the group of Quantum Transport and Spectroscopy of Semiconductors headed by Prof. L. Eaves in the School of Physics and Astronomy, Nottingham University, where he was appointed as a Research Assistant for three years. In Nottingham, he investigated the structural, transport, and optical properties of self-assembled quantum dots, including the effects of magnetic and electric fields on the dot electronic structure. A relevant part of his research activity in Nottingham was focused on the device applications of quantum dots for high-performance semiconductor lasers. In Nottingham Antonio Polimeni was involved also in teaching as a tutor of undergraduate students.
In 2000, Antonio Polimeni joined the Physics Department, University of Rome La Sapienza as Lecturer. After three years probation, he was granted a tenure position. In 2010, Antonio Polimeni was appointed Associate Professor and in 2013 he obtained the national habilitation as Full Professor. In Rome, Antonio Polimeni s interests moved to the electronic properties of dilute nitride and oxide semiconductors, which are materials of high relevance for optoelectronic, photovoltaics, and solid state lighting applications. In particular, he employed high magnetic fields to understand the peculiar physical properties of dilute nitrides also in the presence of high hydrostatic pressure. The most relevant results of his activity in Rome are related to the discovery of the effects that hydrogen irradiation exerts on the electronic and structural properties of dilute nitrides and oxides. This discovery offers the opportunity to fabricate novel nanostrctures with planar architecture. Most recently, the research of Antonio Polimeni focused on the optical, electronic, transport and structural properties of nanowires that feature great prospects in various applicative fields including photovoltaics, nanomedicine and optoelectronics.
He worked also at the High Magnetic Field Laboratory in Nijmegen (The Netherlands) and Grenoble (France), at the Philipps-University of Marburg (Germany) and at the European Synchrotron Radiation Facility in Grenoble (France). He is presently collaborating with different groups worldwide.
Antonio Polimeni has taught Optics and Electromagnetism at the Physics degree course, Quantum Physics and Solid State Physics at the Electronic Engineering degree course, Mechanics at the Biotechnology degree course, and Statistics at the Chemistry degree course. He also lectured Semiconductor Nanostructures at Physics and Materials Science PhD courses. Antonio Polimeni supervised the thesis of 26 Graduate students, 19 Master students and 11 PhD students in Physics and Materials Science. He is member of the PhD board in Materials Science at Sapienza Università di Roma, member of the Physics Department and Faculty of Science Council. He was in charge for the outreach activities of the Physics Department and he is responsible for the Physics Department building maintenance.
Antonio Polimeni acts as referee for Physical Review Letters, Physical Review B, Nature Materials, Nature Photonics, Applied Physics Letters, Nanotechnology, and other international journals. He was member of the organizing committee of the 22nd Condensed Matter Division conference of the European Physical Society and of the 101st conference of the Italian Physical Society. He is member of the Engineering and Physical Sciences Research Council peer review college (UK), he was member of the management committee of the EU COST Action Novel gain materials and devices based on III-N-V compounds , reviewer of the Academy of Sciences of the Czech Republic and of the Romanian National Council for Scientific Research.
He is member of the Editorial Board of Journal of Semiconductors (Institute of Physics Publishing, UK).
Antonio Polimeni was awarded the prize for the best oral presentation at the LXXXVI national conference of the Italian Physical Society (Condensed Matter Physics section), and the Umberto Maria Grassano Prize of the Italian Physical Society in 2000. In 2003, Antonio Polimeni was awarded the Ugo Campisano Prize given by the Italian National Institute of Matter Physics to a researcher younger than 40 years. In 2004, he obtained an appointment of a two year grant Young Researcher Project by the Italian Ministry of University and Scientific and Technological Research. In 2009, he was awarded the Tomassoni prize by Fondazione Roma -Sapienza . In 2015, Antonio Polimeni received by the Faculty of Science the prize for Excellence in teaching .
In 2011, he coordinated a Marie Curie Action Intra-European Fellowship (IEF, named SITELiTE Deterministic coupling between SITE-controlled, dilute nitride-based LighT Emitters and tailor-made photonic-crystal structures) and he received fundings amounting to 193726 . He was granted the Awards Grant 2014 by Sapienza Università di Roma (53000 ). In 2016, he received funds (35000 ) for Optical characterization of thin films employed in photovoltaic devices based on CZTS in collaboration with ENEA (Italian National agency for new technologies, Energy and sustainable economic development). He is presently coordinating a workpackage within an EU project (Innovative Training Network in Horizon 2020, named PROMIS, Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics) worth 516122 .
Antonio Polimeni co-authored 196 peer-reviewed papers, 4 contributed book chapters, 4 invited journal papers, and 32 papers on conference proceedings. He gave 25 invited talks and seminars.
The number of citations of his works is 3800 resulting in an h-factor equal to 33 (source Google Scholar).

Research highlights
(numbers in square brackets refer to the publication list)

The main results of my scientific activity regard the experimental study of the optical and transport properties of semiconducting nanostructures and their application for optoelectronic devices.
Observation of quantum confinement on excitons in quantum barriers [2].
Experimental characterization and modeling of microscopic disorder on the optical properties of semiconductor quantum wells [9,10].
Study of the electronic properties of semiconductor quantum dots [13,20,42].
Realization and optimization of lasers based on quantum dots [19,53].
Magneto-tunneling spectroscopy applied to quantum dot containing devices [50,51].
Electronic properties of dilute nitrides under high magnetic field and hydrostatic pressure [86,88,92,121].
Effect of hydrogen on the electronic and structural properties of III-N-V materials [63,76,87,90].
Defect-assisted band gap engineering in dilute nitrides [115,135, 151].
Electronic properties of semiconductor nanowires [170, 172,173,199].

Awards and grants

September 2000
Umberto Maria Grassano Prize of the Italian Physical Society.

October 2000
First prize for the best oral presentation at the LXXXVI National Conference of the Italian Physical Society (Palermo) (Condensed Matter Physics section).

May 2002 Appointment of a two year grant Young Researcher Project by the Italian Ministry of University and Scientific and Technological Research for the study of the band structure of (InGa)(AsN) alloys.

June 2003 Ugo Campisano Prize of the National Institute of Matter Physics awarded to young researchers in the field of Materials Science.

June 2009 Premio Tomassoni by Sapienza Universita di Roma

August 2017 Somiya Award for international collaboration for Semiconductor Nanowires: Growth, Characterization, Processing and Optoelectronic Devices (Kyoto, Japan).

February 2018 Oustanding referee 2017, Institute of Physics (London, UK)


- 2001-2004 In charge of a workpackage within an EU project in the FP5 programme named Nanomat (Nanostructured and self-assembled materials for electronic and optoelectronics applications, G5RD-CT-2001-00545).

- 2002 Two-year grant by the Italian Ministry of Research and University named Progetto Giovani Ricercatori for experimental studies of the band structure of InGaAsN/GaAsquantum wells by optical spectroscopy under magnetic field .

- 2005 and 2006 Programma Vigoni funds by the Italian Ministry of University and Deutscher Akademischer Austauschdienst (Germny) for Study of the physical properties of strategic materials for telecommunications and high efficiency conversion of solar energy .

- 2004, 2005, 2006 , 2013, 2017, and 2018 Ateneo funds by Universita di Roma La Sapienza .

- 2011-2013 Scientific manager of Deterministic coupling between SITE-controlled, dilute nitride-based LighT Emitters and tailor-made photonic-crystal structures, PIEF-GA-2011-301363, FP7-PEOPLE-2011-IEF, Marie Curie Actions Intra-European Fellowships (IEF) assigned to Marco Felici (193726 ).

- 2014 Principal investigator Awards (Sapienza Università di Roma) Improving light emission efficiency in semiconductor nanowires by hydrogen-assisted surface and hetero-interface passivation (53000 ).

- 2015 Work package leader in Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics, H2020 - H2020-MSCA-ITN-2014 641899 PROMIS (516123 ).

- 2018 Principal investigator Trattamento sicuro dei dati mediante l informazione con singoli fotonia a richiesta Regione Lazio (149000 ).



Professional activities
Referee for Physical Review Letters, Physical Review B, Nature Materials, Semiconductor Science and Technology, Nanotechnology, and other scientific journals.
- Member of the Campisano Prize committee (Istituto Nazionale di Fisica della Materia).
- Member of the organizing committee of the 22nd conference of the Condensed Matter Division of the European Physical Society (2008).
- Member of the international advisory committee of the international conference Recent Advances of Low Dimensional Structures and Devices (2008).
- Reviewer of the Academy of Sciences of the Czech Republic.
- Reviewer of the Engineering and Physical Sciences Research Council (EPSRC, UK)
- Reviewer of the Romanian National Council for Scientific Research (Romania)
- Reviewer of the Israel Science foundation
- Reviewer of the National Science Center (Poland)
- Reviewer Deutscher Akademischer Austausch Dienst (DAAD) German Academic Exchange Service
- Reviewer for SêrCymru (Welsh Government)
- Member of the EU COST Action Novel gain materials and devices based on III-N-V compounds .
- Coordinator of the participation of the Physics Department of Sapienza Università di Roma to the program Scientist Around Youth promoted by the European Commission (2009 and 2010).
- Member of the Committee for the Autonomy and Innovation of Teaching at the Physics Department of Sapienza Università di Roma.
- Coordinator of the Outreach and Guidance Activities provided to students by the Physics Department.
- Member of the Editorial board of Journal of Semiconductors (Insitute of Physics, London UK).
- Member of the Users' Committeee of the European Magnetic Field Laboratory (European facility for high-magnetic field experiments).
- Member of the International Advisory Board of Materials Research Express (Insitute of Physics, London UK).

Short stays in international labs
May 2001: European Synchrotron Radiation Facility (ESRF), Grenoble (France).
October 2002: Grenoble High Magnetic Field Laboratory (GHMLF), Grenoble (France).
October 2005 Philipps-University of Marburg (Germany).
February 2008, October 2009, March 2011, December 2012, and December 2014: High Field Magnet Laboratory (HMFL), Nijmegen (The Netherlands).
January 2019: Synchrotron SOLEIL Paris (France)



University teaching experience
- 2000-2016 Exercise classes in General Physics (Mechanics, Thermodynamics, and Electromagnetism Courses), Optics Laboratory, and Condensed Matter Physics Laboratory, Statistics (Physics course for Chemestry students).
- Specialized courses for Physics PhD students.
- 2005-2006, and 2009-2018 Tenure of Optics and Laboratory course.
- 2018 Tenure of Condensed Matter Physics course.
- 2000-2018 Supervisor of 11 PhD thesis in Physics and Materials Sciences, Supervisor of 8 Laurea thesis, 11 Master thesis, and 28 Laurea breve thesis.


Oral contributions to schools, workshops and conferences

Invited talks

- June 2019 Controlled micro/nano-dome formation in proton-irradiated bulk transition-metal dichalcogenides
4th International Conference on Physics of 2D Crystals 2019 (Hangzhou, China)

- December 2018 Position-controlled patterning of the electronic and structural properties of bulk transition-metal dichalcogenides by proton-driven micro/nano-dome formation
Nanoscience & Nanotechnology 2018 (Frascati, Italy)

- May 2018 Proton-driven patterning of bulk transition-metal dichalcogenides
International Workshop on Electronic Structure of Superconductors and Novel Materials (Rome, Italy)

- December 2017 Proton-driven generation of atomically thin, light emitting domes in transition metal dichalcogenides
Psi-k workshop, 2D layered materials for opto-electronics: a theoretical/computational perspective (Rome, Italy)

- September 2017 Nano-micro domes produced in bulk transition metal dichalcogenides by proton irradiation
NanoInnovation 2017 (Rome, Italy)

- September 2017 Transport and spin properties of excitons, electrons, and holes in wurtzite nanowires
15th International Conference on Advanced Materials by the Materials Research Society (Kyoto, Japan)

- October 2014 Optical and magneto-optical properties of InP wurtzite nanowires
226th meeting of Electrochemical Society State-of-the-Art Program on Compound Semiconductors (SOTAPOCS) (Cancun, Mexico)

- September 2014 Addressing carrier confinement, mass and gyromagnetic factor in semiconductor nanostructures
Workshop on Optical Properties of Individual Nanowires and Quantum Dots in High Magnetic Field, (Toulouse, France)

- August 2014 Magneto-Optical Properties of Wurtzite-Phase Semiconductor Nanowires
8th Nanowire Growth Workshop and Nanowires 2014, (Eindhoven, The Netherlands)

- July 2013 H effects in dilute III-N-V alloys: from defect engineering to nanostructuring
27th International Conference on Defects in Semiconductors, (Bologna, Italy)

- June 2012 Band structure of high-quality wurtzite GaAs in InGaAs-GaAs core-shell nanowires
Nano-structures self-assembly 2012, S. Margherita di Pula (Sardinia, Cagliari, Italy)

- July 2011 Nanostructures and novel materials investigated by magneto-photoluminescence spectroscopy at HFML (Nijmegen)
EuroMagnet meeting, Laboratoire National des Champs Magnétiques Intenses, Toulouse (France)

- July 2010 Unusual compositional dependence of the exciton reduced mass in GaAsBi
1st International Workshop on Bismuth Containing Semiconductors, University of Michigan (USA)

- February 2010 Hydrogen-mediated nanostructuring of dilute nitride semiconductors
XVIII Ural International Winter School on the Physics of Semiconductors, Ekaterinburg (Russia)

- June 2009 Hydrogen-induced defect engineering in dilute nitrides semiconductors
15th Semiconducting and Insulating Materials Conference, Vilnius (Lithuania)

- April 2007 Hydrogen-induced nitrogen passivation in dilute nitrides: a novel approach to defect engineering
Material Research Society spring Meeting, San Francisco (CA, USA)

- January 2005 Carrier localization in (InGa)(AsN) alloys
Optoelectronics 2005, San Jose (CA, USA)

- July 2004 Probing the electronic properties of dilute nitrides by carrier localization and effective mass measurements
General Conference of the Condensed Matter Division, European Physical Society, Prague (Czech Republic)

- July 2003 Hydrogen related effects in diluted nitrides
XXII International Conference on Defects in Semiconductors
Aarhus (Denmark)

- June 2002 Hydrogen as a probe for studying the electronic properties of (InGa)(AsN)/GaAs heterostructures
International symposium on N-containing III-V semiconductors: Fundamentals and Applications of the European Materials Research Society, E-MRS, Strasbourg (France)

- April 2002 Hydrogen as a probe of the nitrogen charge distribution in (InGa)(AsN)/GaAs
19th General Conference of the Condensed Matter Division of the European Physical Society, Brighton (United Kingdom)

- February 2002 Interplay of Nitrogen and Hydrogen in (InGa)(AsN)/GaAs heterostructures
XIV Ural International Winter School on the Physics of Semiconductors Electronic properties of low-dimensional semi- and superconductor structures , Ekaterinburg (Russia)

Invited seminars

May 2018 Hydrogen-driven generation of atomically thin, light emitting domes in transition metal dichalcogenides
Dipartimento di Fisica, Università di Roma Tor Vergata

October 2017
Nano-micro domes produced in bulk transition metal dichalcogenides by proton irradiation
National Research Council, Insitute for Microelectronics and microsystems (Rome, Italy).

September 2017 Proton irradiation in bulk transition metal dichalcogenides
Electronic Engineering Department, Tor Vergata University (Rome, Italy).

July 2017 Proton irradiation in bulk transition metal dichalcogenides
and
Addressing the fundamental electronic properties of wurtzite GaAs nanowires by magneto-optical spectroscopy
Department of Physics, Regensburg University (Regensburg, Germany)

January 2014 Optical and Magneto-Optical Studies of III-V Semiconductor Nanowires
Scuola Normale Superiore, Pisa.

December 2009 Polarization control by strain-engineering in GaAsN/GaAsN:H heterostructures
Laboratory of Analysis and Architecture of Systems (CNRS), Toulouse, France.

May 2009 Spatial nanostructuring of dilute nitrides by hydrogen
University of Essex, United Kingdom.

April 2008 Defect Engineering in Dilute Nitride Semiconductors
TASC National Laboratory, Trieste (Italy).

May 2003 Effects of hydrogen on the electronic and lattice properties of (InGa)(AsN)
Department of Physics and Material Sciences Center, Philipps-University, Marburg (Germany).

July 1999 Carrier hopping in self-assembled quantum dots
Nippon Telegraph and Telephone (NTT), Tokyo (Japan).

February 1999 Carrier hopping in InAs/AlyGa1-yAs self-organized quantum Dots
Max-Planck Institute of Microstructure Physics, Halle (Germany).

February 1998 Next generation laser diodes ,
Department of Physics, University of Sheffield (United Kingdom).

January 1998 Optical and Microstructural Studies of Heterostructures and Injection Lasers incorporating (InGa)As Quantum Dots ,
Institut für Festkorperphysik, TU Berlin (Germany).

October 1996 Disorder and localization effects in InGaAs/GaAs quantum heterostructures
Department of Physics, University of Nottingham, Nottingham (United Kingdom).



Invited papers in books or reviews

M. De Luca and A. Polimeni
Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy in
Applied Physics Review 4, 041102 (2017)

G. Pettinari, A. Polimeni, and M. Capizzi
Effects of Hydrogenation on the Electronic Properties of Dilute Nitrides , in
Hydrogenated dilute nitride semiconductors: theory, properties, applications, edited by G. Ciatto (Pan Stanford Publishing, Singapore, 2014)
ISBN 978-981-4463-45-4

A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, M. Felici and M. Capizzi
Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy Alloys , in
Semiconductor Research, Experimental Techniques, edited by A. Patanè and N. Balkan (Springer, Berlin, Germany, 2012)

R. Trotta, A. Polimeni, and M. Capizzi
Hydrogen-induced defect engineering in dilute nitride semiconductors
Physica Status Solidi C, 6 2644 (2009)

A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, M. Felici and M. Capizzi
Measurement of Carrier Localization Degree, Electron Effective Mass, and Exciton Size in InxGa1-xAs1-yNy Alloys , in
Dilute Nitrides Semiconductors, edited by M. Henini (Elsevier, Oxford, UK, 2005)

A. Polimeni and M. Capizzi
Role of Hydrogen in Dilute Nitrides , in
Physics and applications of dilute nitrides, edited by I. A. Buyanova and W. M. Chen (Taylor and Francis Editors 2004)

A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, and M. Capizzi
Magnetophotoluminescence studies of InxGa1-xAs1-yNy: a measurement of the electron effective mass, exciton size, and degree of carrier localization , in
Journal of Physics: Condensed Matter 16, S3186 (2004)

A. Polimeni, G. Baldassarri, M. Bissiri, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
Role of hydrogen in III-N-V compound semiconductors , in
Semiconductors Science and Technology 17, 797 (2002)



Publications of Antonio Polimeni

Antonio Polimeni coauthored 245 articles published in peer-reviewed journals (210) and conference proceedings (35). These articles were cited 4576/3683/3418 times resulting in an h index equal to 38/33/32 (source Google Scholar/Scopus/WOS)
All papers are listed in the following pages.













Publications in International refereed journals

2020

214. Marco Felici, Giorgio Pettinari, Francesco Biccari, Alice Boschetti, Saeed Younis, Simone Birindelli, Massimo Gurioli, Anna Vinattieri, Annamaria Gerardino, Luca Businaro, Mark Hopkinson, Silvia Rubini, Mario Capizzi, and Antonio Polimeni
"Broadband enhancement of light-matter interaction in photonic crystal cavities integrating site-controlled quantum dots"
Physical Review B 101, 205403 (2020)

213. E. Blundo, M. Felici, T. Yildirim, G. Pettinari, D. Tedeschi, A. Miriametro, B. Liu, W. Ma, Y. Lu, A. Polimeni
Evidence of the direct-to-indirect band gap transition in strained two-dimensional WS2, MoS2, and WSe2
Physical Review Research (Rapid Communication) 2, 012024 (2020)


2019

212. Davide Tedeschi, Elena Blundo, Marco Felici, Giorgio Pettinari, Boqing Liu, Tanju Yildrim, Elisa Petroni, Chris Zhang, Yi Zhu, Simona Sennato, Yuerui Lu, Antonio Polimeni
Controlled micro/nanodome formation in proton-irradiated bulk transition-metal dichalcogenides
Advanced Materials 31, 1970314 (2019)

211. Antonio Di Trolio, Massimiliano Polichetti, Antonio Polimeni, Alberto Maria Testa
Local magneto-optical response of H+ irradiated Zn1-xCoxO thin films
The European Physical Journal Special Topics 228, 683 (2019)

210. P. E. Faria Junior, D. Tedeschi, M. De Luca, B. Scharf, P. C. M. Christianen, C. Jagadish, A. Polimeni, J. Fabian,
Common nonlinear features and spin-orbit coupling effects in the Zeeman splitting of novel wurtzite materials
Physical Review B 99, 195205 (2019)

209. D. Tedeschi, M. De Luca, P. E. Faria Junior, A. Granados Del Aguila, Q. Gao, H. H. Tan, B. Scharf, P. C. M. Christianen, C. Jagadish, J. Fabian, A. Polimeni
Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy
Physical Review B 99 (Rapid Communication), 161204 (2019)

208. A. Gerardino, G. Pettinari, N. Caselli, S. Vignolini, F. Riboli, F. Biccari, M. Felici, A. Polimeni, A. Fiore, M. Gurioli, F. Intonti
Coupled Photonic Crystal Nanocavities as a Tool to Tailor and Control Photon Emission
Ceramics 2, 34 (2019)

207. G. Pettinari, L. Labbate, M. S. Sharma, S. Rubini, A. Polimeni, M. Felici
Plasmon-assisted bandgap engineering in dilute nitrides
Nanophotonics, 2019 (https://doi.org/10.1515/nanoph-2019-0025)

206. E Giulotto, M Geddo, M Patrini, G Guizzetti, MS Sharma, M Capizzi, A Polimeni, G Pettinari, S Rubini, M Felici
Strain related relaxation of the GaAs-like Raman mode selection rules in hydrogenated GaAs1-xNx layers
Journal of Applied Physics 125, 175701 (2019)

205. G. Varvaro, A. Di Trolio, A. Polimeni, A. Gabbani, F. Pineider, C de Julián Fernández, G. Barucca, P. Mengucci, A. Amore Bonapasta, A. M. Testa
Giant magneto-optical response in H+ irradiated Zn1-xCoxO thin films
Journals of Materials Chemistry C 7, 78 (2019)


2018

204. G. Ciatto, G Pettinari, A Polimeni
Gallium clustering and structural effects of hydrogenation in InGaN/GaN nanostructures
Journal of Applied Physics 124, 165709 (2018)

203. G. Pettinari, M Felici, F Biccari, M Capizzi, A Polimeni
Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities
Photonics 5, 10 (2018)

202. Francesco Biccari, Alice Boschetti, Giorgio Pettinari, Federico La China, Massimo Gurioli, Francesca Intonti, Anna Vinattieri, MayankShekhar Sharma, Mario Capizzi, Annamaria Gerardino, Luca Businaro, Mark Hopkinson, Antonio Polimeni, Marco Felici
Site Controlled Single Photon Emitters Fabricated by Near Field Illumination
Advanced Materials 30, 1870147 (2018)

201. M Felici, G Pettinari, F Biccari, M Capizzi, A Polimeni
Spatially selective hydrogen irradiation of dilute nitride semiconductors: a brief review
Semiconductor Science and Technology 33, 053001 (2018)

200. Riccardo Panetta, Guido Righini, Marcello Colapietro, Luisa Barba, Davide Tedeschi, Antonio Polimeni, Andrea Ciccioli, Alessandro Latini
Azetidinium lead iodide: synthesis, structural and physico-chemical characterization
Journal of Materials Chemistry A 6, 10135-10148(2018)








2017

199. M. De Luca, S. Rubini, M. Felici, A. Meaney, P. C. M. Christianen, F. Martelli, and A. Polimeni
Addressing the fundamental electronic properties of wurtzite GaAs nanowires by high-field magneto-photoluminescence spectroscopy
Nano Letters 17, 6540 (2017)

198. M. De Luca and A. Polimeni
Electronic properties of wurtzite-phase InP nanowires determined by optical and magneto-optical spectroscopy
Applied Physics Review 4, 041102 (2017) invited paper

197. H. A. Fonseka, A. S. Ameruddin, P. Caroff, D. Tedeschi, M. De Luca, F. Mura, Y. Guo, M. Lysevych, F. Wang, H. H. Tan, A. Polimeni, C. Jagadish
InP InxGa1 xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3 1.55 m wavelength range
Nanoscale 9, 13554 (2017)

196. M. B. Rota, A. S. Ameruddin, J. Wong-Leung, A. Belabbes, Q. Gao, A. Miriametro, F. Mura, H. H. Tan, A. Polimeni, F. Bechstedt, C. Jagadish, M. Capizzi
Critical Temperature for the Conversion from Wurtzite to Zincblende of the Optical Emission of InAs Nanowires
Journal of Physical Chemistry C 121, 16650 (2017)


195. G. Pettinari, A. Gerardino, L. Businaro, A. Polimeni, M. Capizzi, M. Hopkinson, S. Rubini, F. Biccari, F. Intonti, A. Vinattieri, M. Gurioli, and M Felici
A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides
Microelectronic Engineering 174, 16 (2017)


2016

194. M. B Rota, A. S Ameruddin, H A. Fonseka, Q. Gao, F. Mura, A. Polimeni, Antonio Miriametro, H Hoe Tan, Chennupati Jagadish, Mario Capizzi
Bandgap Energy of Wurtzite InAs Nanowires
Nano Letters 16, 5197 (2016)

193. Davide Tedeschi, Marta De Luca, A Granados del A guila, Qian Gao, Gina Ambrosio, Mario Capizzi, Hark Hoe Tan, Peter CM Christianen, Chennupati Jagadish, Antonio Polimeni
Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires
Nano Letters 16, 6213 (2016)

192. Martyna Grydlik, Mark T Lusk, Florian Hackl, A. Polimeni, Thomas Fromherz, Wolfgang Jantsch, Friedrich Scha ffler, Moritz Brehm
Laser Level Scheme of Self-Interstitials in Epitaxial Ge Dots Encapsulated in Si
Nano Letters 16, 6802 (2016)

191. D. Tedeschi, M. De Luca, H A. Fonseka, Q. Gao, F. Mura, H. H. Tan, S. Rubini, F. Martelli, C. Jagadish, M. Capizzi, A. Polimeni
Long-Lived Hot Carriers in III V Nanowires
Nano Letters 16, 3085 (2016)

190. A. Di Trolio, P. Alippi, Elvira M. Bauer, G Ciatto, MH Chu, G. Varvaro, A. Polimeni, M. Capizzi, M. Valentini, F. Bobba, C. Di Giorgio, A. Amore Bonapasta
Ferromagnetism and conductivity in hydrogen irradiated Co-doped ZnO thin films
ACS applied materials & interfaces 8, 12925 (2016)

189. M. Valentini, C. Malerba, F. Menchini, D. Tedeschi, A. Polimeni, M. Capizzi, and A. Mittiga
Effect of the order-disorder transition on the optical properties of Cu2ZnSnS4
Applied Physics Letters 108, 211909 (2016)




2015

188. S. Birindelli, M. Kesaria, D. Giubertoni, G. Pettinari, A. V. Velichko, Q. D. Zhuang, A. Krier, A. Patanè, A. Polimeni, and M. Capizzi
Peculiarities of the hydrogenated In(AsN) alloy
Semiconductor Science and Technology 30, 105030 (2015)

187. E. Giulotto, M. Geddo, M. Patrini, G. Guizzetti, M. Felici, M. Capizzi, A. Polimeni, F. Martelli, and S. Rubini
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures
Journal of Applied Physics 116, 245304 (2015)

186. G. Pettinari, F. Filippone, A. Polimeni, G. Mattioli, A. Patanè, V. Lebedev, M. Capizzi, and A. Amore Bonapasta
Genesis of "solitary Cations" Induced by Atomic Hydrogen
Advanced Functional Materials 25, 5353-5359 (2015)

185. G. Pettinari, M. Capizzi, and A. Polimeni
Carrier masses and band-gap temperature sensitivity in Ga(AsBi) alloys
Semiconductor Science and Technology 30, 094002 (2015)

184. Attilio Zilli, Marta De Luca, Davide Tedeschi, H. Aruni Fonseka, Antonio Miriametro, Hark Hoe Tan, Chennupati Jagadish, Mario Capizzi, and Antonio Polimeni
Temperature Dependence of Interband Transitions in Wurtzite InP Nanowires
ACS Nano 9, 4277-4287 (2015)

183. Marta De Luca, Attilio Zilli, H. Aruni Fonseka, Sudha Mokkapati, Antonio Miriametro, Hark Hoe Tan, Leigh Morris Smith, Chennupati Jagadish, Mario Capizzi, and Antonio Polimeni
Polarized Light Absorption in Wurtzite InP Nanowire Ensembles
Nano Letters, 15, 998 (2015)

182. G. Ciatto, G. Pettinari, N. Balakrishnan, F. Berenguer, A. Patanè, S. Birindelli, M. Felici,and A. Polimeni
Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN
Applied Physics letters 106, 051905 (2015)

181. A. V. Velichko, A. Patanè, M. Capizzi, I. C. Sandall, D. Giubertoni, O. Makarovsky, A. Polimeni, A. Krier, Q. Zhuang, and C. H. Tan
H-tailored surface conductivity in narrow band gap In(AsN)
Applied Physics Letters 106, 022111 (2015)


2014

180. M. De Luca, A. Polimeni, H. A. Fonseka, A. J. Meaney, P. C. M. Christianen, J. C. Maan, S. Paiman, H. H. Tan, F. Mura, C. Jagadish, and M. Capizzi
Magneto-optical properties of wurtzite-phase InP nanowires
Nano Letters 14, 4250 (2014)

179. M. Felici, S. Birindelli, R. Trotta, M. Francardi, A. Gerardino, A. Notargiacomo, S. Rubini, F. Martelli, M. Capizzi and A. Polimeni
Nanoscale Tailoring of the Polarization Properties of Dilute-Nitride Semiconductors via H-Assisted Strain Engineering
Physical Review Applied 2, 064007 (2014)

178. E. Giulotto, M. Geddo, M. Patrini, G. Guizzetti, M. Felici, M. Capizzi, A. Polimeni, F. Martelli, and S. Rubini
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/ GaAs1-xNx:H planar heterostructures
Journal of Applied Physics 116, 245304 (2014)

177. Simone Birindelli, Marco Felici, Johannes S. Wildmann, Antonio Polimeni, Mario Capizzi, Annamaria Gerardino, Silvia Rubini, Faustino Martelli, Armando Rastelli, and Rinaldo Trotta
Single photons on demand from novel site-controlled GaAsN/GaAsN:H quantum dots
Nano Letters 14, 1275 (2014)

176. L. Amidani, G. Ciatto, F. Boscherini, F. Filippone, G. Mattioli, P. Alippi, F. Bondino, A. Polimeni, M. Capizzi, and A. Amore Bonapasta
Connections between local and macroscopic properties in solids: The case of N in III-V-N alloys
Physical Review B 89, 085301 (2014)

175. G. Pettinari, M. Felici, R. Trotta, M. Capizzi, and A. Polimeni
Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring
Journal of Applied Physics 115, 012011 (2014)


2013

174. Marta De Luca, Antonio Polimeni, Mario Capizzi, Alan J. Meaney, Peter C. M. Christianen, Jan Kees Maan, Francesco Mura, Silvia Rubini, and Faustino Martelli
Determination of Exciton Reduced Mass and Gyromagnetic Factor of Wurtzite (inGa)As Nanowires by Photoluminescence Spectroscopy under High Magnetic Fields
ACS Nano 7, 10717 (2013)

173. Marta De Luca, Antonio Polimeni, Marco Felici, Antonio Miriametro, Mario Capizzi, Francesco Mura, Silvia Rubini, and Faustino Martelli
Excitonic recombination and absorption in InxGa1-xAs/GaAs heterostructure nanowires
Physical Review B 87, 235304 (2013)

172. G. Pettinari, A. Polimeni, M. Capizzi, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Patanè, T. Tiedje
Effects of Bi incorporation on the electronic properties of GaAs: Carrier masses, hole mobility, and Bi-induced acceptor states
Physica Status Solidi B 250, 779 (2013)

171. Marta De Luca, Antonio Polimeni, Marco Felici, Antonio Miriametro, Mario Capizzi, Francesco Mura, Silvia Rubini, and Faustino Martelli
Resonant depletion of photogenerated carriers in InGaAs/GaAs nanowire mats
Applied Physics Letters 102, 173102 (2013)

170. N. V. Kozlova, G. Pettinari, O. Makarovsky, N. Mori, A. Polimeni, M. Capizzi, Q. D. Zhuang, A. Krier, and A. Patanè
Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities
Physical Review B 87, 165207 (2013)

169. D. Dagnelund, C. W. Tu, A. Polimeni, M. Capizzi, W. M. Chen and I. A. Buyanova
Effect of thermal annealing on defects in post-growth hydrogenated GaNP
Physica Status Solidi (C) 10, 561 (2013)

168. M. Felici, A. Polimeni, G. Lavenuta, E. Tartaglini, M. De Luca, M. Capizzi, A. Notargiacomo, R. Carron, D. Fekete, P. Gallo, B. Dwir, A. Rudra, E. Kapon, G. Pettinari, P. C. M. Christianen, and J. C. Maan
Effects of hydrogen irradiation on the optical and electronic properties of site-controlled InGaAsN V-groove quantum wires
Physica Status Solidi (C) 10, 556 (2013)


2012

167. A. F. Qasrawi, K. F. Ilaiwi, and A. Polimeni
Hydrogen implantation effects on the electrical and optical properties of InSe thin films
Turkish Journal of Physics 36, 385 (2012)

166. G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, X. F. Lu, and T. Tiedje
Effects of hydrogen on the electronic properties of Ga(AsBi) alloys
Applied Physics Letters 101, 222103 (2012).

165. M. De Luca, G. Pettinari, G. Ciatto, L. Amidani, F. Filippone, A. Polimeni, E. Fonda, F. Boscherini, A. Amore Bonapasta, D. Giubertoni, A. Knübel, V. Lebedev, and M. Capizzi
Identification of four-hydrogen complexes in In-rich InxGa1 xN (x>0.4) alloys using photoluminescence, x-ray absorption, and density functional theory
Physical Review B Rapid Communication 86, 201202 (2012)

164. L. Wen, M. Stavola, W. B. Fowler, R. Trotta, A. Polimeni, M. Capizzi, G. Bisognin, M. Berti, S. Rubini, and F. Martelli
Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs1 yNy alloys: Role of N-Hn centers with n>2 and their thermal stability
Physical Review B 86, 085206 (2012)

163. Marco Felici, Antonio Polimeni, Elena Tartaglini, Andrea Notargiacomo, Marta De Luca, Romain Carron, Dan Fekete, Benjamin Dwir, Alok Rudra, Mario Capizzi, and Eli Kapon
Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires
Applied Physics Letters 101, 151114 (2012)

162. S. Frabboni, V. Grillo, G. C. Gazzadi, R. Balboni, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, G. Guzzinati, and F. Glas
Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1 xNx intercalated GaAs/GaAs1 xNx:H heterostructures
Applied Physics Letters 101, 111912 (2012)

162. N. Balakrishnan, G. Pettinari, O. Makarovsky, L. Turyanska, M. W. Fay, M. De Luca, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, and A. Patanè
Band-gap profiling by laser writing of hydrogen-containing III-N-Vs
Physical Review B 86, 155307 (2012)

161. M. Geddo, E. Giulotto, M. S. Grandi, M. Patrini, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini
An all optical mapping of the strain field in GaAsN/GaAsN:H wires
Applied Physics Letters 101, 191908 (2012)

160. Marco Felici, Giorgio Pettinari, Romain Carron, Giovanna Lavenuta, Elena Tartaglini, Antonio Polimeni, Dan Fekete, Pascal Gallo, Benjamin Dwir, Alok Rudra, Peter C. M. Christianen, Jan C. Maan, Mario Capizzi, and Eli Kapon
Magneto-optical properties of single, site-controlled InGaAsN quantum wires grown on pre-patterned GaAs substrates
Physical Review B 85, 155319 (2012)

159. R. Trotta, A. Polimeni, and M. Capizzi
Hydrogen incorporation in III-N-V semiconductors: From macroscopic to nanometre control of the material physical properties
Advanced Functional Materials 22, 1782 (2012)

158. G. Pettinari, A. Patanè, A. Polimeni, M. Capizzi, Xianfeng Lu, and T. Tiedje
Bi-induced p-type conductivity in nominally undoped Ga(AsBi)
Applied Physics Letters 100, 092109 (2012)

157. D. Dagnelund, I. P. Vorona, G. Nosenko, X. J. Wang, C. W. Tu, H. Yonezu, A. Polimeni, M. Capizzi, W. M. Chen, and I. A Buyanova
Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
Journal of Applied Physics 111, 023501 (2012)


2011

155. M. Shafi, R. H. Mari, A. Khatab, M. Henini, A. Polimeni, M. Capizzi, and M. Hopkinson
Deep levels in H-irradiated GaAs1-xNx (x < 0.01) grown by molecular beam epitaxy
Journal of Applied Physics 110, 124508 (2011)

154. J. Alvarez and J.-P. Kleider R. Trotta, A. Polimeni, M. Capizzi F. Martelli and L. Mariucci, and S. Rubini
Giant and reversible enhancement of the electrical resistance of GaAs1-xNx by hydrogen irradiation
Physical Review B 84, 085331 (2011)

153. Y. Puttisong, D. Dagnelund, I. A. Buyanova, C. W. Tu, A. Polimeni, M. Capizzi, and W. M. Chen
Room Temperature Spin Filtering Effect in GaNAs: Role of Hydrogen
Applied Physics Letters 99, 152109 (2011)

152. N. Balakrishnan, A. Patanè, O. Makarovsky, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini
Laser writing of the electronic activity of and H-atoms in GaAs
Applied Physics Letters 99, 021105 (2011)

151. R. Trotta, A. Polimeni, F. Martelli, G. Pettinari, M. Capizzi, L. Felisari, S. Rubini, M. Francardi, A. Gerardino, P. C. M. Christianen, and J. C. Maan
Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures
Advanced Materials 23, 2706 (2011)

150. M. Geddo, M. Patrini, G. Guizzetti, M. Galli, R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, and S. Rubini
Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures
Journal of Applied Physics 109, 123511 (2011)

149. G. Pettinari, H. Engelkamp, P. C. M. Christianen, J. C. Maan, A. Polimeni, M. Capizzi, X. Lu, and T. Tiedje
Compositional evolution of Bi-induced acceptor states in GaAs1-xBix alloy
Physical Review B 83, 201201 (2011)

148. R. Trotta, A. Polimeni, and M. Capizzi
Hydrogen-mediated nanostructuring of dilute nitride semiconductors
Physica Status Solidi B-basic solid state physics 248, 1195 (2011)

147. D. Dagnelund, X. J. Wang, C. W. Tu, A. Polimeni, M. Capizzi, W. M. Chen, and I. A. Buyanova
Effect of postgrowth hydrogen treatment on defects in GaNP
Applied Physics Letters 98, 141920 (2011)


2010

146. R. Trotta, L. Cavigli, L. Felisari, A. Polimeni, A. Vinattieri, M. Gurioli, M. Capizzi, F. Martelli, S. Rubini, L.
Mariucci, M. Francardi, and A. Gerardino
Quantum confinement effects in hydrogen-intercalated GaAs1-xNx/GaAsN:H heterostructures investigated by photoluminescence spectroscopy
Physical Review B 81, 235327 (2010)

145. G. Pettinari, A. Polimeni, J. H. Blokland, R. Trotta, P. C. M. Christianen, M. Capizzi, J. C. Maan, X. Lu, E. C.
Young, and T. Tiedje
Compositional dependance of the exciton reduced mass in GaAs1-xBix (x=0-10%)
Physical Review B 81, 235211 (2010)

144. L. Wen, F. Bekisli, M. Stavola, W. B. Fowler, R. Trotta, A. Polimeni, M. Capizzi, S. Rubini, and F. Martelli
Detailed structure of the H-N-H center in GaAs1-yNy revealed by vibrational spectroscopy under uniaxial stress
Physical Review B 81, 233201 (2010)


2009

143. R. Trotta, A. Polimeni, and M. Capizzi
Hydrogen-induced defect engineering in dilute nitride semiconductors
Physica Status Solidi C, 6 2644 (2009) invited paper

142. R. Trotta, D. Giubertoni, A. Polimeni, M. Bersani, M. Capizzi, F. Martelli, S. Rubini, G. Bisognin, and M. Berti
Hydrogen diffusion in GaAs1 xNx
Physical Review B 80, 195206 (2009)

141. R. Trotta, A. Polimeni, M. Capizzi, F. Martelli, S. Rubini, M. Francardi, A. Gerardino, and L. Mariucci
Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures
Applied Physics Letters 94, 261905 (2009)

140. G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen, J. C. Maan, V. Lebedev, V. Cimalla, and O. Ambacher
Carrier mass measurements in degenerate indium nitride
Physical Review B 79, 165207 (2009)

139. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, M. Capizzi, M. Berti, G. Bisognin, D. De Salvador, L. Floreano, F. Martelli, S. Rubini, and L. Grenouillet
Local structure of nitrogen-hydrogen complexes in dilute nitrides
Physical Review B 79, 165205 (2009)

138. E. P. O Reilly, A. Lindsay, P. J. Klar, A. Polimeni, ad M. Capizzi
Trends in the electronic structure of dilute nitride alloys
Semiconductor Science and Technology 24, 033001 (2009)







2008

137. L. Felisari, V. Grillo, F. Martelli, R. Trotta, A. Polimeni, M. Capizzi, F. Jabeen, and L. Mariucci
In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures
Applied Physics Letters 93, 102116 (2008)

136. S. Sanguinetti, M. Guzzi, E. Grilli, M. Gurioli, L. Seravalli, P. Frigeri, S. Franchi, M. Capizzi, S. Mazzuccato, and A. Polimeni
Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots
Physical Review B 78, 085313 (2008)

135. G. Pettinari, A. Polimeni, M. Capizzi , J. Bockland , P. Christianen , J. C. Maan , E. Young, and T. Tiedje
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1-xBix
Applied Physics Letters 92, 262105 (2008)

134. R. Trotta, A. Polimeni, M. Capizzi, D. Giubertoni, M. Bersani, G. Bisognin, M. Berti, S. Rubini, F. Martelli, L. Mariucci, M. Francardi, and A. Gerardino
Effect of hydrogen incorporation temperature in in-plane engineered GaAsN/GaAsN:H heterostructures
Applied Physics Letters 92, 221901 (2008)

133. K. Hantke, S. Horst, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Ruehle, F. Masia, G. Pettinari, A. Polimeni, and M. Capizzi
Zero-phonon lines of nitrogen-cluster states in GaNxAs1-x: H identified by time-resolved photoluminescence
Journal of Materials Science 43, 4344 (2008)

132. A. Polimeni, F. Masia, G. Pettinari, R. Trotta, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, and P. J. Klar
Role of strain and properties of N clusters at the onset of the alloy limit in GaAs1-xNx
Physical Review B 77, 155213 (2008)

131. G. Pettinari, F. Masia, M. Capizzi, A. Polimeni, M. Losurdo, G. Bruno, T.H. Kim, S. Choi, A. Brown, V. Lebedev, V. Cimalla, O. Ambacher
Experimental evidence of different hydrogen donors in n-type InN
Physical Review B 77, 125207 (2008)

130. G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Capizzi, S. Rubini, F. Martelli, A. Franciosi
High-resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides
Journal of Applied Crystallography 41, 366 (2008)

129. S. Kleekajai, F. Jiang, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, C. W. Tu, G. Bais, S. Rubini, and F. Martelli
Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory
Physical Review B 77, 085213 (2008)

128. A. Polimeni, G. Pettinari, R. Trotta, F. Masia, M. Felici, M. Capizzi, A. Lindsay, E. P. O'Reilly, T. Niebling, W. Stolz, P. J. Klar, F. Martelli, and S. Rubini
Photoluminescene under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
Physica Status solidi A-Applications and Materials Science 205, 107 (2008)


2007

127. G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici, M. Capizzi, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, A. Franciosi
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction
Physica Status Solidi A: Applications and Materials Science 204, 2766 (2007)

126. F. Boscherini, M. Malvestuto, G. Ciatto, F. D'Acapito, G. Bisognin, D. De Salvador, M. Berti, M. Felici, A. Polimeni, Y. Nabetani
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers
Journal of Physics- Condensed Matter 19, 446201 (2007)


125. Marina Berti, Gabriele Bisognin, Davide De Salvador, Enrico Napolitani, and Silvia Vangelista, Antonio Polimeni, Mario Capizzi, Federico Boscherini, Gianluca Ciatto, Silvia Rubini, Faustino Martelli, and Alfonso Franciosi
Formation and dissolution of D-N complexes in dilute nitrides
Physical Review B 76, 205323 (2007)

124. Maria Losurdo, Maria M. Giangregorio, and Giovanni Bruno Tong-Ho Kim, Soojeong Choi, April S. Brown Giorgio Pettinari, Mario Capizzi, and Antonio Polimeni
Behavior of hydrogen in InN investigated in real time exploiting spectroscopic ellipsometry
Applied Physics Letters 91, 081917 (2007)

123. S. Kleekajai, K. Colon, M. Stavola, W. B. Fowler, K. R. Martin, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, and C. W. Tu
Vibrational spectroscopy of hydrogenated GaP1-yNy
Physica B 401-402, 347 (2007)

122. G. Pettinari, A. Polimeni, F. Masia, R. Trotta, M. Felici, M. Capizzi, T. Niebling, W. Stolz, and P. J. Klar
Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure
Physical Review Letters 98, 146402 (2007)

121. M. Geddo, T. Ciabattoni, G. Guizzetti, M. Galli, M., Patrini, A. Polimeni, R. Trotta, M. Capizzi, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
Photoreflectance and reflectance investigation of deuterium-irradiated GaAsN
Applied Physics Letters 90, 091907 (2007)

120. M. Losurdo, M. M. Giangregorio, G. Bruno, T.-H. Kim, P. Wu, S. Choi, A. Brown, F. Masia, M. Capizzi, and A. Polimeni
Characteristics of InN grown on SiC under the In-rich regime by molecular beam heteroepitaxy
Applied Physics Letters 90, 011910 (2007)

119. P. J. Klar, J. Teubert, M. Gu ngerich, T. Niebling, H. Gru ning, W. Heimbrodt, K. Volz, W., Stolz, A. Polimeni, M. Capizzi, E. P. O'Reilly, A. Lindsay, M. Galluppi, L. Geelhaar, H. Riechert, and S. Tomic
Hydrostatic pressure experiments on dilute nitride alloys
Physica Status Solidi (B) 244, 24 (2007)


2006

118. G. Pettinari, F. Masia, A. Polimeni, M. Felici, A. Frova, M. Capizzi, A. Lindsay, E. P. O'Reilly, P. J. Klar, W. Stolz, G. Bais, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi,
Influence of nitrogen-cluster states on the gyromagnetic factor of electrons in GaAs1-xNx
Physical Review B, 74, 245202 (2006)

117. M. Gurioli, M. Zamfirescu, A. Vinattieri, S. Sanguinetti, E. Grilli, M. Guzzi, S. Mazzucato, A. Polimeni, M. Capizzi, L. Serevalli, P. Frigeri, and S. Franchi
Characterization of hydrogen passivated defects in strain-engineered semiconductor quantum dot structures
Journal of Applied Physics, 100, 84313 (2006)

116. M. Güngerich, P. J. Klar, W. Heimbrodt, K. Stolz, K. Volz, K. Köhler, J. Wagner, A. Polimeni, and M. Capizzi
Correlation of band formation and local vibrational mode structure in Ga0.95Al0.05As1-xNx with 0 x 0.03
Physica Status Solidi C 3, 619 (2006)

115. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi
C2v nitrogen-hydrogen complexes in GaAsN revealed by X-ray absorption near-edge spectroscopy and ab initio simulations
Physica Status Solidi C 3, 1836 (2006)

114. M. Felici, A. Polimeni, G. Salviati, L. Lazzarini, N. Armani, F. Masia, M. Capizzi, F. Martelli, M. Lazzarino, G. Bais, M. Piccin, S. Rubini, A. Franciosi
In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors
Advanced Materials 18, 1993 (2006)

113. M. Felici, R. Trotta, F. Masia, A. Polimeni, A. Miriametro, M. Capizzi, P. J. Klar, W. Stolz
Compositional disorder in GaAs1-xNx:H investigated by photoluminescence
Physical Review B 74, 85203 (2006)

112. G. Bisognin, D. De Salvador, A. V. Drigo, E. Napolitani, A. Sambo, M., Berti, A. Polimeni, M. Felici, M. Capizzi, M. Gu ngerich, P. J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, A. Franciosi
Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain
Applied Physics Letters 89, 61904 (2006)

111. S. V. Dudiy, A. Zunger, M. Felici, A. Polimeni, M. Capizzi, H. P. Xin, and C. W. Tu
Nitrogen-induced perturbation of the valence band states in GaP1-xNx alloys
Physical Review B 74, 155303 (2006)

110. F. Masia, G. Pettinari, A. Polimeni, M. Felici, A. Miriametro, M. Capizzi, A. Lindsay, S. B. Healy, E. P. O'Reilly, A. Cristofoli, G. Bais, M. Piccin, S. Rubini, F. Martelli, A. Franciosi, P. J. Klar, K. Volz, W. Stolz
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in GaAs1-xNx
Physical Review B 73, 073201 (2006)

109. M. Felici, A. Polimeni, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, T Hirai
Passivation of an isoelectronic impurity by atomic hydrogen: The case of ZnTe:O
Applied Physics Letters 88, 101910 (2006)

108. J. Teubert, P. J. Klar, W. Heimbrodt, K. Volz, W. Stolz, A. Polimeni, M. Capizzi
Competition of N-passivation and Te-passivation in hydrogenation of Te-doped (Ga,In)(N,As)
Physica E 32, 218 (2006)

107. I. A. Buyanova, M. Izadifard, T. Seppanen, J. Birch, W. M. Chen, S. J. Pearton, A. Polimeni, M. Capizzi, M. S. Brandt, C. Bihler, Y. G. Hong, C. W. Tu,
Unusual effects of hydrogen on electronic and lattice properties of GaNP alloys
Physica B 376, 568 (2006)


2005

106. K. Hantke, J. D. Heber, S. Chatterjee, P. J. Klar, K. Volz, W. Stolz, W. W. Rühle, A. Polimeni, and M. Capizzi
Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells
Applied Physics Letters 87, 252111 (2005)

105. S. Mazzucato, D. Nardin, M. Capizzi, A. Polimeni, A. Frova, L. Serravalli, and S. Franchi
Defect passivation in strain engineered InAs/(InGa)As quantum dots
Materials Science & Engineering C-Biomimetic ans Supramolecular Systems 25 830, (2005)

104. G. Ciatto, H. Renevier, M. G. Proietti, A. Polimeni, M. Capizzi, S. Mobilio, and F. Boscherini
Effects of hydrogenation on the local structure of InxGa1 xAs1 yNy quantum wells and GaAs1 yNy epilayers
Physical Review B 72, 085322 (2005)

103. G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Polimeni, and M. Capizzi
Nitrogen-hydrogen complex in GaAsxN1 x revealed by x-ray absorption spectroscopy
Physical Review B 71, Rapid Communication 201301 (2005)

102. M. Felici, A. Polimeni, A. Miriametro, M. Capizzi, H. P. Xin, and C. W. Tu
Free carrier and/or exciton trapping by nitrogen pairs in dilute GaP1-xNx
Physical Review B 71, 045209 (2005)

101. G. Ciatto, F. D Acapito, S. Sanna, V. Fiorentini, A. Polimeni, M. Capizzi, S. Mobilio, and F. Bosherini
Comparison between experimental and theoretical determination of the local structure of the GaAs1-yNy dilute nitride alloy
Physical Review B 71, 115210 (2005)


2004

100. A. Polimeni, F. Masia, G. Baldassarri Höger von Högersthal, and M. Capizzi
Magnetophotoluminescence studies of InxGa1-xAs1-yNy: a measurement of the electron effective mass, exciton size, and degree of carrier localization
Journal of Physics: Condensed Matter 16, S3186 (2004)

99. M. Izadifard, I. A. Buyanova, W. M. Chen, A. Polimeni, M. Capizzi, and C. W. Tu
Role of hydrogen in improving optical quality of GaNAs alloys
Physica E 20, 313 (2004)

98. D. Ochoa, A. Polimeni, M. Capizzi, A. Frova, L. Seravalli, M. Minelli, P. Frigeri, and S. Franchi
Hydrogenation of strain engineered InAs/InxGa1-xAs quantum dots
Physica Status Solidi C 1, 581 (2004)

97. I. A. Buyanova, M. Izadifard, I. G. Ivanov, J. Birch, W. M. Chen, M. Felici, A. Polimeni, M. Capizzi, Y. G. Hong, H. P. Xin, and C. W. Tu
Direct experimental evidence for unusual effects of hydrogen on the electronic and vibrational properties of GaNxP1-x alloys: A proof for a general property of dilute nitrides
Physical Review B 70, 245215, (2004)

96. M. Felici, V. Cesari, A. Polimeni, A. Frova, M. Capizzi, Y. D. Choi, B. O, Y.-M. Yu, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, T. Hirai, I. K. Sou, and W. K. Ge
Effect of lattice ionicity on hydrogen activity in II-VI materials containing isoelectronic oxygen impurities
IEE Proc.-Optoelectron. 151, 465 (2004)

95. A. Polimeni, M. Capizzi, Y. Nabetani, Y. Ito, T. Okuno, T. Kato, T. Matsumoto, and T. Hirai
Temperature dependence and bowing of the bandgap in ZnSe1-xOx
Applied Physics Letters 84, 3304 (2004)

94. A. Polimeni, F. Masia, A. Vinattieri, G. Baldassarri Hoeger von Hoegersthal, and M. Capizzi
Single carrier localization in InxGa1-xAs1-yNy investigated by magnetophotoluminescence
Applied Physics Letters 84, 2295 (2004)

93. F. Jiang, Michael Stavola, M. Capizzi, A. Polimeni, A. Amore Bonapasta, and F. Filippone
Vibrational spectroscopy of hydrogenated GaAs1-yNy: A structure-sensitive test of an H2*(N) model
Physical Review B 69, Rapid Communication 041309 (2004)

92. A. Polimeni, G. Baldassarri Hoeger von Hoegersthal, F. Masia, A. Frova, M. Capizzi, Simone Sanna, Vincenzo Fiorentini, P. J. Klar, and W. Stolz
Tunable variation of the electron effective mass and exciton radius in hydrogenated GaAs1-xNx
Physical Review B 69, Rapid Communication 041201 (2004)

91. A. Polimeni, F. Masia, G. Baldassarri Hoeger von Hoegersthal, ,A. Frova, M. Capizzi, S. Sanna, V. Fiorentini, P. J. Klar, and W. Stolz
Tuning of the electron effective mass and exciton wavefunction size in GaAs1-xNx
Physica E 21, 747 (2004)


2003

90. A. Polimeni, F. Masia, M. Felici, G. B. H. von Hogerstal, M. Bissiri, A. Frova, M. Capizzi, P. J. Klar, W. Stolz, I. A. Buyanova, W. M. Chen, H. P. Xin, ans C. W. Tu
Hydrogen-related effects in diluted nitrides
Physica B 340, 371 (2003)

89. A. Polimeni, G. Ciatto, L. Ortega, F. Jiang, F. Boscherini, F. Filippone, A. Amore Bonapasta, M. Stavola, and M. Capizzi
Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys
Physical Review B 68, 085204 (2003)

88. M. Geddo, G. Guizzetti, M. Capizzi, A. Polimeni, D. Gollub, and A. Forchel
Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1-xAs1-yNy alloy
Applied Physics Letters 83, 470 (2003)

87. G. Baldassarri Höger von Högersthal, A. Polimeni, F. Masia, M. Bissiri, and M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
Magnetophotoluminescence studies of (InGa)(AsN)/GaAs heterostructures
Physical Review B 67, 233304 (2003)

86. A. Polimeni, M. Bissiri, M. Felici, M. Capizzi, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu
Nitrogen passivation induced by atomic hydrogen: The GaP1-yNy case
Physical Review B 67, Rapid Communication 201303 (2003)

85. F. Masia, A. Polimeni, G. Baldassarri H. V. H., M. Bissiri, M. Capizzi, P. J. Klar,and W. Stolz
Early manifestation of localization effects in diluted Ga(AsN)
Applied Physics Letters 82, 4474 (2003)

84. I. A. Buyanova, M. Izadifard, W. M. Chen, A. Polimeni, M. Capizzi, H. P. Xin, and C. W. Tu
Hydrogen-induced improvements in optical quality of GaNAs alloys
Applied Physics Letters 82, 3662 (2003)

83. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, and A. Forchel
Role of the host matrix in the carrier recombination of InGaAsN alloys
Applied Physics Letters 82, 2805 (2003)

82. P. J. Klar, H. Gruning, M. Gungerich, W. Heimbrodt, J. Koch, T. Torunski, W. Stolz, A. Polimeni, and Capizzi
Global changes of the band structure and the crystal lattice of Ga(N,As) due to hydrogenation
Physical Review B 67, Rapid Communication 121206 (2003)

81. D. Ochoa, A. Polimeni, M. Capizzi, A. Patane, M. Henini, L. Eaves, and P. C. Main PC
Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption
Journal of Crystal Growth 251, 192 (2003)

80. P. J. Klar, H. Gruning, L. Chen, T. Hartmann, D. Golde, M. Gungerich, W. Heimbrodt, J. Koch, K. Volz, B. Kunert, T. Torunski, W. Stolz, A. Polimeni, M. Capizzi, G. Dumitras, L. Geelhaar, and H. Riechert
Unusual properties of metastable (Ga,In)(N,As) containing semiconductor structures
IEE Proceedings-Optoelectronics 150, 28 (2003)

79. A. Polimeni, M. Bissiri, G. Baldassarri Höger von Högersthal, M. Capizzi, D. Giubertoni, M. Barozzi, M. Bersani, D. Gollub, M. Fischer, and A. Forchel
Hydrogen as a probe of the electronic properties of (InGa)(AsN)/GaAs heterostructures
Solid State Electronics 47, 447 (2003)

78. A. Vinattieri, D. Alderighi, M. Zamfirescu, M. Colocci, A. Polimeni, M. Capizzi, D. Gollub, M.Fischer, A. Forchel
Exciton Dynamics in InGaAsN/GaAs heterostructures
Physica Status Solidi (a) 195, 558 (2003)

77. G. Ciatto, F. Boscherini, F. D Acapito, S. Mobilio, G. Baldassarri H. V. H., A. Polimeni, M. Capizzi, D. Gollub, and A. Forchel
Atomic ordering in (InGa)(AsN) quantum wells: An In K-edge X-ray absorption investigation
Nuclear Instruments and Methods in Physics Research B 200, 34 (2003)


2002

76. A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni
Structure and passivation effects of mono- and dihydrogen complexes in GaAs1-yNy
Physical Review Letters 89, 216401 (2002)

75. M.Geddo, R. Pezzuto, M. Capizzi, A. Polimeni, D. Gollub, M. Fischer, A. Forchel
Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures
European Physical Journal B 30, 39 (2002)

74. G. Baldassarri Höger von Högersthal, M. Bissiri, F. Ranalli, V. Gaspari, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, A. Forchel
Reversibility of the effects of hydrogen on the electronic properties of InxGa1-xAs1-yNy
Physica E 13, 1082 (2002)

73. A. Polimeni, A. Patanè, R. K. Hayden, L. Eaves, M. Henini, P. C. Main, K. Uchida, N. Miura, J. Main, and G. Wurner
Linewidth broadening of excitonic luminescence from quantum wells in pulsed magnetic fields
Physica E 13, 349 (2002)


72. M. Bissiri, G. Baldassarri, A. Polimeni, M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
Role of N clusters in InxGa1-xAs1-yNy band-gap reduction
Physical Review B 66, 033311 (2002)

71. A. Polimeni, G. Baldassarri, M. Bissiri, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
Role of hydrogen in III-N-V compound semiconductors
Semiconductors Science and Technology 17, 797 (2002)

70. M. Bissiri, G. Baldassarri, A. Polimeni,V. Gaspari, F. Ranalli, M. Capizzi, A. Amore Bonapasta, F. Jiang, M. Stavola, D. Gollub, M. Fischer, and A. Forchel
Hydrogen-induced passivation of nitrogen in GaAs1-yNy
Physical Review B 65, 235210 (2002)

69. M. Bissiri, V. Gaspari, G. Baldassarri, F. Ranalli, A. Polimeni, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
Nitrogen-related complexes in Ga(AsN) and their interaction with hydrogen
Physica Status Solidi a 190, 651 (2002)

68. M. Henini, A. Patanè, A. Polimeni, A. Levin, L. Eaves, P. C. Main, and G. Hill
Electrical and optical properties of self-assembled quantum dots
Microelectronics Journal 33, 313 (2002)

67. A. Polimeni, M. Bissiri, A. Augieri, G. Baldassarri, , M. Capizzi, D. Gollub, M. Fischer, M. Reinhardt, and A. Forchel
Reduced temperature dependence of the band gap in GaAs1-yNy investigated with photoluminescence
Physical Review B 65, 235325 (2002)


2001

66. A. Levin, A. Patanè, F. Schindler, A. Polimeni, L. Eaves, P. C. Main, M. Henini
Piezoelectric effects on the electron-hole dipole in In0.5Ga0.5As/GaAs self-assembled quantum dots
Physica Status Solidi (b) 224, 37 (2001)

65. A. Patanè, A. Levin, A. Polimeni, L. Eaves, P. C. Main, and M. Henini
Universality of the Stokes shift for a disordered ensemble of quantum dots
Physica Status Solidi (b) 224 41 (2001)

64. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells
Physical Review B 63, 195320 (2001)

63. A. Polimeni, G. Baldassarri H. V. H., M. Bissiri, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
Effect of hydrogen on the electronic properties of InxGa1-xAs1-yNy/GaAs quantum wells
Physical Review B 63, Rapid Communication 201304 (2001)

62. G. Baldassarri H. V. H., M. Bissiri, A. Polimeni, M. Capizzi, M. Fischer, M. Reinhardt, and A. Forchel
Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells
Applied Physics Letters 78, 3472 (2001)

61. T. Surkova, A. Patanè, L. Eaves, P. C. Main, M. Henini, A. Polimeni, A. P. Knights and C. Jeynes
Indium inter-diffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots
Journal of Applied Physics 89, 6044 (2001)

60. M. Henini, A. Patanè, A. Polimeni, L. Eaves, P. C. Main, A. Levin, and G. Hill
Optical properties and laser applications of (InGa)As/(AlGa)As self-assembled quantum dots
Japanese Journal of Applied Physics part 1, 40 (3B), 2077 (2001)

59. M. Bissiri, V. Gaspari, A. Polimeni, G. Baldassarri Hoegerstal von Hoegersthal, M. Capizzi, A. Frova, M. Fischer, M. Reinhardt, and A. Forchel
High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells
Applied Physics Letters 79, 2585 (2001)

58. M. Bissiri, V. Gaspari, G. Baldassarri, F. Ranalli, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Effect of hydrogen on the electronic properties of GaAs1-yNy heterostructures
Acta Physica Polonica A 100, 365 (2001)





57. G. Baldassarri, F. Ranalli, M. Bissiri, V. Gaspari, A. Polimeni, M. Capizzi, A. Nucara, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Hydrogen tuning of (InGa)(AsN) optical properties
Acta Physica Polonica A 100, 373 (2001)

56. A. Polimeni, G. Baldassarri, M. Bissiri, V. Gaspari, F. Ranalli, M. Capizzi, A. Frova, A. Miriametro, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Interplay of nitrogen and hydrogen in InxGa1-xAs1-yNy/GaAs heterostructures
Physica B 308, 850 (2001)


2000

55. A. Polimeni, A. Patanè, M. Henini, L. Eaves, P. C. Main, and G. Hill
Carrier hopping in InAs/AlyGa1-yAs quantum dot heterostructures: Effects on optical and laser properties
Physica E 7, 452 (2000)

54. A. Patanè, A. Polimeni, L. Eaves, M. Henini, P.C. Main, P.M. Smowton, E.J. Johnston, P.J. Hulyer E. Herrmann, G. M. Lewis, and G. Hill
Experimental studies of the multimode spectral emission in quantum dot lasers
Journal of Applied Physics 87, 1943 (2000)

53. S. Sanguinetti, G. Chiantoni, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P. C. Main
Self-assembling of In(Ga)As/GaAs quantum dots on (N11) substrates: the (311)A case
Micron 31, 309 (2000)

52. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin, and G. Hill
Resonant tunneling and photoluminescence spectroscopy in quantum wells containing self-assembled quantum dots
Journal of Applied Physics 88, 2005 (2000)

51. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, M. Henini, A. E. Belyaev, Yu. V. Dubrovskii, P. N. Brounkov, E. E. Vdovin, Yu. N. Khanin, and G. Hill
Modulation of the luminescence spectra of InAs self-assembled quantum dots by resonant tunneling through a quantum well
Physical Review B 62, 13595 (2000)

50. A. Patanè, A. Levin, A. Polimeni, L. Eaves, P. C. Main, M. Henini, and G. Hill
Carrier thermalization within a disordered ensemble of self-assembled quantum dots
Physical Review B 62, 11084 (2000)

49. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells
Applied Physics Letters 77, 2870 (2000)

48. A. Patanè, A. Levin, A. Polimeni, F. Schindler, L. Eaves, P. C. Main, and M. Henini
Piezoelectric effects in In0.5Ga0.5As self-assembled quantum dots grown on (311)B GaAs substrates
Applied Physics Letters 77, 2979 (2000)

47. L. Artús, R. Cuscó, S. Hernández, A. Patanè, A. Polimeni, M. Henini, and L. Eaves
Quantum-dot phonons in self-assembled InAs/GaAs quantum dots: Dependence on the coverage thickness
Applied Physics Letters 77, 3556 (2000)

46. T. P. Surkova, P. Kaczor, A. J. Zakrzewski, K. Swiatek, V. Y. Ivanov, M. Godlewski, A. Polimeni, L. Eaves, W. Giriat
Optical properties of ZnSe, ZnCdSe and ZnSSe alloys doped with iron
Journal of Crystal Growth 214, 576 (2000)

45. S. Sanguinetti, G. Chiantoni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P. C. Main
3D island nucleation behaviour on high index substrates
Materials Science and Engineering B-Solid State Materials for Advanced Technology 74, 239 (2000)


1999

44. A. Patanè, A. Polimeni, L. Eaves, P. C. Main, R. K. Marshall, M. Henini, Yu. V. Dubrovskii, A. E. Belyaev, and G. Hill
Carrier dynamics in double barrier diodes incorporating quantum dots
Physica B 272, 21 (1999)

43. A. Patanè, A. Polimeni, M. Henini, L. Eaves, P. C. Main and G. Hill
Thermal effects in quantum dot lasers
Journal of Applied Physics 85, 625 (1999)

42. A. Polimeni, A. Patanè, M. Henini, L. Eaves, and P. C. Main
Temperature dependence of the optical properties of InAs/AlyGa1-yAs self-organized quantum dots
Physical Review B 59, 5064 (1999)

41. S. G. Lyapin, I. E. Itskevich, I. A. Trojan, P. C. Klipstein, A. Polimeni, L. Eaves, P. C. Main, M. Henini
Pressure-induced -X crossover in self-assembled In(Ga)As/GaAs quantum dots
Physica Status Solidi (b) 211, 79 (1999)

40. A. Patanè, M. Henini, A. Polimeni, L. Eaves, P. C. Main, M. Al-Khafaji and A. G. Cullis
Luminescence tuning of InAs/GaAs quantum dots grown on high-index planes
Superlattices and Microstructures 25, 113 (1999)

39. A. Polimeni, A. Patanè, M. Henini, L. Eaves, P. C. Main, S. Sanguinetti and M. Guzzi
Influence of high-index GaAs substrates on the growth of highly-strained (InGa)As/GaAs heterostructures
Journal of Crystal Growth 201, 276 (1999)

38. A. Patanè, A. Polimeni, M. Henini, L. Eaves, P. C. Main
In0.5Ga0.5As quantum dot lasers grown on (100) and (311)B GaAs substrates
Journal of Crystal Growth 201, 1139 (1999)

37. A. Polimeni, A. Patanè, A. Thornton, T. Ihn, L. Eaves, P. Main, M. Henini and G. Hill
Optical and Resonant Tunneling Spectroscopy of Self-Assembled Quantum Dot Systems
Japanese Journal of Applied Physics Part II: Letters 38, 535 (1999)

36. P. N. Brounkov, A. R. Kovsh, V. M. Ustinov, Y. G. Musikhin, N. N. Ledentsov, S. G. Konnikov, A. Polimeni, A. Patanè, P. C. Main, L. Eaves, and C. M. A. Kapteyn
Emission of electrons from the ground and first excited states of self-organized InAs GaAs quantum dot structures
Journal of Electronic Materials 28, 486 (1999)

35. M. Henini, A. Polimeni, A. Patanè, L. Eaves, P. C. Main, and G. Hill
Effect of the substrate orientation on the self-organisation of (InGa)As/GaAs quantum dots
Microelectronics Journal 30, 319 (1999)

34. S. Sanguinetti, A. Miotto, S. Castiglioni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P. C. Main
Optical and morphological properties of In(Ga)As/GaAs quantum dots grown on novel index surfaces
Microelectronics Journal 30, 419 (1999)

33. A. Patanè, A. Polimeni, P.C. Main, M. Henini, and L. Eaves
High-temperature light emission from InAs quantum dots
Applied Physics Letters 75, 814 (1999)

32. P.M. Smowton, E.J. Johnston, S.V. Dewar, P.J. Hulyer, H.D. Summers, A. Patanè, A. Polimeni, and M. Henini
Spectral Analysis of InGaAs/GaAs Quantum Dot Lasers
Applied Physics Letters 75, 2169 (1999)

31. S. Sanguinetti, G. Chiantoni, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, A. Patanè, L. Eaves, and P.C. Main
Substrate orientation dependence of island nucleation critical thickness in strained heterostructures
Europhysics Letters 47, 701 (1999)

30. T. P. Surkova, M. Godlewski, K. Swiatek, P. Kaczor, A. Polimeni, L. Eaves, and W. Giriat
Intra-shell transitions of 3D metal ions (Fe, Co, Ni) in II-VI wide-gap semiconductor alloys
Physica B 274, 848 (1999)



29. M. Henini, P. N. Brounkov, A. Polimeni, S. T. Stoddart, P. C. Main, L. Eaves, A. R. Kovsh, Y. G. Musikhin, and S. G. Konnikov
Electron and hole levels of InAs quantum dots in a GaAs matrix
Superlattices and microstructures 25, 105 (1999)


1998

28. A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, K. Uchida, R. K. Hayden, and N. Miura
Magneto-photoluminescence and electroluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planes
Physica E 2, 662 (1998)

27. R. K. Hayden, K. Uchida, N. Miura, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, and P. C. Main
High field Magnetoluminescence Spectroscopy of self-Assembled (InGa)As Quantum dots on high Index Planes
Physica B 246, 93 (1998)

26. R. K. Hayden, K. Uchida, N. Miura, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, and P. C. Main Photoluminescence Spectroscopy of self-assembled (InGa)As quantum dots in high magnetic fields
Physica B 251, 262 (1998)

25. S. T. Stoddart, A. Polimeni, M. Henini, L. Eaves, P. C. Main, R. K. Hayden, K. Uchida and N. Miura
Spectroscopic studies of self-assembled InAs and In0.5Ga0.5As quantum dots
Applied Surface Science 123, 366 (1998)

24. A. Patanè, M. G. Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, L. Nasi, L. Lazzarini, G. Salviati, A. Bosacchi and S. Franchi
Self-aggregated InAs quantum dots in GaAs
Journal of Applied Physics 83, 5529 (1998)

23. R. P. Campion, J. R. Fletcher, P. J. King, S. M. Morley, A. Polimeni and R. G. Ormson
Helical current flow along 90 degrees twist boundaries in YBCO thin films
Superconductor Science & Technology 11, 730 (1998)

22. S. C. Fortina, S. Sanguinetti, E. Grilli, M. Guzzi, M. Henini, A. Polimeni and L. Eaves
InAs quantum dots grown on nonconventionally oriented GaAs substrates
Journal of Crystal Growth 187, 126 (1998)

21. M. Capizzi, A. Frova, M. G. Alessi, A. Patanè, A. Polimeni and F. Martelli
InxGa1-xAs/GaAs interfaces: From 2D islands to quantum dots
Nuovo Cimento della Società Italiana di Fisica D-Condensed Matter 20, 915 (1998)

20. P. N. Brounkov, A. Polimeni, S. T. Stoddart, M. Henini, L. Eaves, P. C. Main, A. R. Kovsh, Y. G. Musikhin and S. G. Konnikov
Electronic structure of self-assembled InAs quantum dots in GaAs matrix
Applied Physics Letters 73, 1092 (1998)

19. A. Polimeni, M. Henini, A. Patanè, L. Eaves, P. C. Main and G. Hill
Optical properties and device applications of (InGa)As self- assembled quantum dots grown on (311)B GaAs substrates
Applied Physics Letters 73, 1415 (1998)

18. A. E. Belyaev, L. Eaves, P. C. Main, A. Polimeni, S. T. Stoddart, M. Henini.
Capacitance spectroscopy of single-barrier GaAs/AlAs/GaAs structures containing InAs quantum dots
Acta Physica Polonica A 94, 245 (1998)

17. S. Sanguinetti, S. C. Fortina, A. Miotto, E. Grilli, M. Guzzi, M. Henini, A. Polimeni, L. Eaves
Self-aggregation of inAs quantum dots on (N11) GaAs substrates
Thin Solid Films 336, 9 (1998)







1997

16. A. Patanè, M. Grassi Alessi, A. Polimeni, M. Capizzi, F. Martelli, P. Borri, M. Gurioli, and M. Colocci
Formation and relaxation of exciton-carbon acceptor complexes in GaAs
Physical Review B 56, 3834 (1997)

15. A. Patanè, M. Grassi Alessi, F. Intonti, A. Polimeni, M. Capizzi, F. Martelli, M. Geddo, A. Bosacchi and S. Franchi
Evolution of the optical properties of InAs/GaAs quantum dots for increasing InAs coverages
Physica Status Solidi A-Applied Research 164, 493 (1997)

14. D. Orani, A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, A. D'Andrea, N. Tomassini, P. Borri, M. Gurioli, and M. Colocci
Binding energy and lifetime of excitons in InxGa1-xAs/GaAs quantum wells
Physica Status Solidi A-Applied Research 164, 107 (1997)


1996

13. A. Polimeni, A. Patanè, M. Capizzi, F. Martelli, L. Nasi, and G. Salviati
Self-aggregation of quantum dots for very thin InAs layers grown on GaAs
Physical Review B 53, Rapid Communication 4213 (1996)

12. F. Martelli, A. Polimeni, A. Patanè, M. Capizzi, P. Borri, M. Gurioli, M. Colocci, A. Bosacchi, and S. Franchi
Exciton localization by potential fluctuation at the interface of InGaAs/GaAs quantum wells
Physical Review B 53, 7421 (1996)

11. P. Borri, M. Gurioli, M. Colocci, F. Martelli, M. Capizzi, A. Patanè, and A. Polimeni
Photoinduced structures in the exciton luminescence spectrum of InGaAs/GaAs quantum well heterostructures
Journal of Applied Physics 80, 3011 (1996)

10. A. Polimeni, A. Patanè, M. Grassi Alessi, M. Capizzi, F. Martelli, A. Bosacchi, and S. Franchi
Stokes shift in quantum wells: Trapping versus thermalization
Physical Review B 54, 16389 (1996)


1995

9. A. Patanè, A. Polimeni, M. Capizzi and F. Martelli
Linewidth analysis of the photoluminescence of InxGa1-xAs/GaAs quantum wells (x= 0.09, 0.18, 1.0)
Physical Review B 52, 2784 (1995)

8. M. Capizzi, F. Martelli, and A. Polimeni
InGaAs/GaAs Quantum Wells: a Standard Photoluminescence System?
Annales de Physique 20, C2-183 (1995)

7. P. Borri, M. Gurioli, M. Colocci, F. Martelli, A. Polimeni, A. Patanè, and M. Capizzi
Excitation energy Dependence of the Optical Properties of InGaAs/GaAs Quantum Wells Heterostructures
Il Nuovo Cimento 17D, 1383 (1995)


1994

6. M. Capizzi, A. Polimeni, A. Frova, F. Martelli, M. R. Bruni, and M.G. Simeone
Above Barrier Confinement in InGaAs/GaAs Multiple Quantum-Well Structures
Solid State Electronics 37, 641, (1994)

5. A. Polimeni, D. Marangio, M. Capizzi, A. Frova, and F. Martelli
Giant Photoluminescence Enhancement in Deuterated Highly Strained InAs/GaAs Quantum Wells
Applied Physics Letters 65, 1254 (1994)

4. M. Capizzi, A. Frova, A. Polimeni, D. Marangio F. Martelli, and A. Rudra
Deuterium in In-Based Quantum Wells
Superlattices and Microstructures 15, 113 (1994)


3. M. Capizzi, A. Polimeni, B. Bonanni, V. Emiliani, A. Frova, D. Marangio and F. Martelli
Deuterium in InGaAs/GaAs Strained Quantum Wells: an Optically active Impurity
Semiconductors Science and Technology 9, 2233 (1994)


1993

2. F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M.G. Simeone
Exciton confinement in GaAs quantum barriers
Physical Review B 48, 1643 (1993)

1. F. Martelli, M. Capizzi, A. Frova, A. Polimeni, F. Sarto, M. R. Bruni, and M.G. Simeone
Exciton Modes in Quantum Barriers
Society of PhotoOptical Instrumentation Engineers 1985, 376 (1993)





Publications in Proceedings of International conferences

35c) M. Felici, G. Pettinari, F. Biccari, S. Younis, M. Sharma, S. Rubini, A. Gerardino, M. Gurioli, A. Vinattieri, F. Intonti, A. Polimeni
Spatially Selective Hydrogen Irradiation/Removal of Dilute Nitrides: A Versatile Nanofabrication Tool for Photonic Applications
Quantum Information and Measurement, Optical Society of America, T5A.27

34c) P Faria Junior, D Tedeschi, M De Luca, B Scharf, A Polimeni, J Fabian
Magnetic properties of InP wurtzite nanowires from theory: g-factors and exciton Zeeman splitting
Bulletin of the American Physical Society 2018

33c) D D'Agostino, C Di Giorgio, F Bobba, A Di Trolio, A Amore Bonapasta, P Alippi, A Polimeni, AM Cucolo,
Scanning Probe Microscopy Investigation of H-irradiated ZnO and Co-doped ZnO thin films in dark and UV-light conditions
Bulletin of the American Physical Society 62 (2017)

32c) G. Ciatto, A. Di Trolio, E. Fonda, P. Alippi, A. Polimeni, M. Capizzi, G. Varvaro, A. A. Bonapasta,
Defect-induced Magnetism in Cobalt-doped ZnO Epilayers
AIP Conference Proceedings 1583, 332 (2014)

31c) M. Felicia, G. Pettinari, A. Polimeni, R. Carron, G. Lavenuta, E. Tartaglini, M. De Luca, A. Notargiacomo, D. Fekete, P. Gallo, B. Dwir, A. Rudra, P. C. M. Christianen, J. C. Maan, M. Capizzi, and E. Kapon
Effects Of Hydrogen Irradiation On The Optical And Electronic Properties Of Site-controlled InGaAsN V-groove Quantum Wires
AIP Conference Proceedings 1566, 93 (2013)

30c) Marta De Luca, Giorgio Pettinari, Antonio Polimeni, Mario Capizzi, Gianluca Ciatto, Lucia Amidani, Emiliano Fonda, Federico Boscherini4, Francesco Filippone, Aldo Amore Bonapasta, Andreas Knübel, Volker Cimalla, Oliver Ambacher, Damiano Giubertoni, and Massimo Bersani
Tuning of the Optical Properties of In-rich InxGa1 xN (x=0.82-0.49) Alloys by Light-ion Irradiation at Low Energy
AIP Conference Proceedings 1566, 93 (2013)

29c) Rinaldo Trotta, Antonio Polimeni, Marco Felici, Giorgio Pettinari, Mario Capizzi, Andrea Frova, Giancarlo Salviati, Laura Lazzarini, Nicola Armani, Luigi Mariucci, Giorgio Bais, Faustino Martelli, Silvia Rubini
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering
Mater. Res. Soc. Symposium Proceedings 994, F02-08 (2006)

28c) F. Masia, G. Pettinari, A. Polimeni, M. Felici, R. Trotta, M. Capizzi, T. Niebling, H. Günther, P. J. Klar, W. Stolz2, A. Lindsay, E. P. O Reilly, M. Piccin, G. Bais, S. Rubini, F. Martelli, and A. Franciosi
Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio
AIP Conference Proceedings 893, 157 (2007)

27c) G. Bisognin, D. De Salvador, E. Napolitani, M. Berti, A. Polimeni, M. Felici, M. Capizzi, M. Güngerich, P.J. Klar, G. Bais, F. Jabeen, M. Piccin, S. Rubini, F. Martelli, and A. Franciosi
Evidence of a new hydrogen complex in dilute nitride alloys
AIP Conference Proceedings 893, 155 (2007)

26c) M. Felici, A. Polimeni, A. Scordo, F. Masia, A. Frova, M. Capizzi, Y. Nabetani, T. Okuno, K. Aoki, T. Kato, T. Matsumoto, and T. Hirai
Influence of the Host Lattice on the O-H Interaction in II-VI Semiconductors
AIP Conference Proceedings 893, 327 (2007)

25c) M. Felici, R. Trotta, F. Masia,, A. Polimeni,, A. Miriametro, M. Capizzi, P. J. Klar, and W. Stolz
Investigation of Compositional Disorder in GaAsN:H
AIP Conference Proceedings 893, 313 (2007)

24c) M. Felici, A. Polimeni, F. Masia, R. Trotta, G. Pettinari, M. Capizzi, G. Salviati, L. Lazzarini, N. Armani, M. Piccin, G. Bais, F. Martelli, S. Rubini, A. Franciosi, and L. Mariucci
In-Plane Band Gap Engineering by Hydrogenation of Dilute Nitride Semiconductors
AIP Conference Proceedings 893, 31 (2007)

23c) M. Losurdo, M. M. Giangregorio, G. Bruno, T. H. Kim, P. Wu, S. Choi, M. Morse, A. Brown, F. Masia, A. Polimeni, and M. Capizzi
Modification of InN properties by interactions with hydrogen and nitrogen
Mater. Res. Soc. Symposium Proceedings 892, 155 (2006)

22c) A. Polimeni, A. Vinattieri, M. Zamfirescu, F. Masia and M. Capizzi
Carrier localization in (InGa)(AsN) alloys
Proceedings of SPIE - The International Society for Optical Engineering 5725, 98 (2005)


21c) S. Mazzucato, D. Nardin, A. Polimeni, M. Capizzi, D. Granados, and J. M., Garci a
Hydrogenation of stacked self-assembled InAs/GaAs quantum dots
(2005) AIP Conference Proceedings 772, 621 (2005)

20c) M. Felici, A. Polimeni, M. Capizzi, S. V. Dudiy, A. Zunger, I. A. Buyanova, W. M. Chen, H. P. Xin, and C. W. Tu
High energy optical transitions in Ga(PN): Contribution from perturbed valence band
AIP Conference Proceedings 772, 265 (2005)

19c) M. Geddo, G. Guizzetti, R. Pezzuto, A. Polimeni, M. Capizzi, M. Bissiri, G. Baldassarri H. v H., D. Gollub, and A. Forchel
Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures
Mater. Res. Soc. Symposium Proceedings 744, 531-536 (2003)


18c) A. Amore Bonapasta, F. Filippone, P. Giannozzi, M. Capizzi, and A. Polimeni
Hydrogen-nitrogen Complexes in GaAsN Alloys the Role of Doping in the Formation of Mono- and Di-hydrogen Complexes
Proceedings of the ICPS XXVI, (Edinburgh United Kingdom, 2002) P62 (2003)

17c) G. Baldassarri H. v. H., M. Bissiri, A. Polimeni, M. Capizzi, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, M. Reinhardt, and A. Forchel
Hydrogen as a Probe of the Electronic and Lattice Properties of InGaAsN
Proceedings of the ICPS XXVI, (Edinburgh United Kingdom, 2002), G1.4 (2003)

16c) A. Augieri, G. Baldassarri H. v. H., M. Bissiri, M. Capizzi, A. Polimeni, I. K. Sou, and W. K. Ge
Hydrogen Passivation of Isoelectronic Impurities in ZnTeS
Proceedings of the ICPS XXVI, (Edinburgh United Kingdom, 2002), H46 (2003)

15c) M. Capizzi, A. Polimeni, G. Baldassarri Höger von Högersthal, M. Bissiri, A. Amore Bonapasta, F. Jiang, M. Stavola, M. Fischer, A. Forchel, I. K. Sou, and W. K. Ge
Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen
Mat. Res. Soc. Symp. Proc. 719, 251 (2002)

14c) A. Levin, A. Patanè, F. Schindler, A. Polimeni, L. Eaves, P. C. Main, and M. Henini
Quantum-confined Stark shift in In0.5Ga0.5As self-assembled quantum dots grown on (100) and (311)B GaAs substrates
Proceedings of the 25th Conference on the Physics of Semiconductors p. 1217 (Osaka, Japan, 2001)

13c) A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel
Temperature dependence of light emission and absorption in (InGa)(AsN)/GaAs single quantum wells
Proceedings of the 25th Conference on the Physics of Semiconductors p. 539 (Osaka, Japan, 2001)

12c) A. Patanè, A. Polimeni, Yu. V. Dubrovskii, P. N. Brounkov, A. E. Belyaev, R. K. Marshall, L. Eaves, P. C. Main, M. Henini, G. Hill
How is resonant tunnelling affected by self-assembled quantum dots?
IOP Conference Series 166, 131 (2000)

11c) A. Patanè, A. Polimeni, A. Levin, L. Eaves, P. C. Main, M. Henini, P. M. Smowton, G. Hill
(InGa)As/(AlGa)As self-assembled quantum dots: optical properties and laser applications
IOP Conference Series 166, 247 (2000)

10c) A. Patanè, A. Polimeni, M. Henini, L. Eaves, P.C. Main
Energy emission tuning of InAs/GaAs self-assembled quantum dots by growth interruption
IOP Conference Series 162, 451 (1999)

9c) A. Patanè, A. Polimeni, M. Henini, L. Eaves, P.C. Main, and G. Hill
Laser properties of (InGa)As/GaAs self-assembled quantum dots grown on high-index planes
IOP Conference Series 162, 439 (1999)

8c) A. Polimeni, M. Henini, R. K. Hayden, L. Eaves, P. C. Main, D. Cherns, Y. Atici, K. Uchida and N. Miura
Effect of the natural substrate patterning on the growth of (InGaAs)/GaAs self-assembled quantum dots: microscopic and optical studies
Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)

7c) P. N. Brounkov, A. R. Kovsh, Y. G. Musikhin and S. G. Konnikov, M. Henini, A. Polimeni, S. T. Stoddart, , L. Eaves, P. C. Main
Electronic structure of self-assembled InAs quantum dots in GaAs matrix
Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)

6c) S. G. Lyapin, I. E. Itskevich, I. A. Trojan, P. C. Klipstein, L. Eaves, P. C. Main, M. Henini and A. Polimeni.
Photoluminescence study of self-assembled InAs/GaAs quantum dots under pressure
Proceedings of the 24th Conference on the Physics of Semiconductors (Jerusalem, Israel, 1998)

5c) A. Polimeni, M. Henini, L. Eaves, S. T. Stoddart, P. C. Main, K. Uchida, R. K. Hayden, and N. Miura
Optical and Microscopic Properties of In0.5Ga0.5As/GaAs highly strained heterostructures
Proceedings of Physics Conferences Series (Insitute of Physics), 1997, no. 156 page 519.

4c) J. R. Fletcher, P. J. King, A . Polimeni, R. P. Campion, and S. M. Morley
Helical current flow at the boundary between two tilted anisotropic conductors: 90° YBCO twist boundaries
Institute of Physics Conferences Series (Institute of Physics), 1997, no. 158, page 245.

3c) A. Patanè, A. Polimeni, F. Martelli, M. Capizzi, L. Lazzarini, L. Nasi, and G. Salviati
Absence of a critical thickness for the self-aggregation of quantum dots in InAs/GaAs quantum wells
Proceedings of the 23rd Conference on the Physics of Semiconductors, page 1305, XXIII ICPS, Berlin, Germany, (1996)

2c) A. Polimeni, A. Patanè, M. Capizzi, and F. Martelli
Photoluminescence of InAs/GaAs Quantum Dots
Proceedings of Workshop on Highlights of Light Spectroscopy on Semiconductors, page 205, Frascati, Italy, (1996)

1c) M. Capizzi, A. Frova, D. Marangio, A. Polimeni and F. Martelli
Photoluminescence of InAs/GaAs Near-Monolayer Quantum Wells Before and After Deuterium Irradiation
Proceedings of the 22nd Conference on the Physics of Semiconductors, page 1149, XXII ICPS, Vancouver, Canada, (1994)



Course Code Year Course - Attendance
SOLID STATE SENSORS 10592578 2020/2021 Physics
OPTICS AND LABORATORY 1018976 2020/2021 Physics
PHYSICS I 1015377 2019/2020 Civil Engineering
OPTICS AND LABORATORY 1018976 2019/2020 Physics
CONDENSED MATTER PHYSICS 1055344 2019/2020 Physics
PHYSICS I 1015377 2019/2020 Environmental Engineering
OPTICS AND LABORATORY 1018976 2018/2019 Physics
CONDENSED MATTER PHYSICS 1055344 2018/2019 Physics
QUANTUM AND SOLID STATE PHYSICS 1047992 2017/2018 Electronics Engineering
OPTICS AND LABORATORY 1018976 2017/2018 Physics
CONDENSED MATTER PHYSICS 1055344 2017/2018 Physics
OPTICS AND LABORATORY 1018976 2016/2017 Physics
QUANTUM AND SOLID STATE PHYSICS 1047992 2016/2017 Electronics Engineering
LABORATORY OF PHYSICS 1023782 2016/2017 Physics
Department
FISICA
SSD

FIS/01