APPLIED ELECTRONICS

Course objectives

To train engineers capable to analyse and design basic electronic circuits and systems.

Channel 1
LUIGI SCHIRONE Lecturers' profile

Program - Frequency - Exams

Course program
Generality. Information and signals. Analog and digital signals. Noise. Basic structure of an electronic system. Representation of signals in the time domain and frequency domain. Kirchoff's laws. Thevenin theorem. Norton's theorem. Superposition theorem of effects. Controlled generators. Two-door networks. Transfer function and impulse response. Bandwidth. Filters. Bode plots. Concept of signal amplification. Amplifier circuit symbols. Transfer feature. Voltage gain. Current gain. Power gain. Expression of gain in decibels. Power supplies in amplifiers. Nonlinear transfer characteristic and amplifier saturation. Amplifier composed of multiple stages in cascade. Circuit models for amplifiers: voltage, current, transconductance and transresistance amplifiers. Differential amplifiers: difference amplification, common mode amplification, common mode rejection ratio (CMRR). Ideal operational amplifier. Inverting configuration, non-inverting configuration, unity gain voltage follower. Differential amplifier. Differential amplifier for instrumentation. Adder. Integrator, differentiator. Logarithmic and exponential amplifier. Real DC operational amplifier: offset voltage and bias currents. Frequency response of the amplifier. Properties of negative feedback. Gain and frequency response of a feedback amplifier. The stability problem: phase and gain margin. Inverting and non-inverting comparator. Comparator with hysteresis, Schmitt trigger. Square, triangular and pulse wave generator. Graphical methods for circuit analysis. Loading line. Graphic study in the presence of non-linear load. Graphical study of circuits in the presence of time-varying signals. The ideal diode. The real diode: I-V characteristic. Piecewise linear model. Constant voltage model. Operation in the breakdown region: zener diodes. Voltage regulator with zener. Single half-wave, double half-wave, bridge rectifier. Rectifier with filter capacitor. Limiter circuits. Peak detector. Diode switching. Protection of inductive circuits. Materials for electronics, intrinsic and extrinsic semiconductors, doping of an n-type and p-type semiconductor, majority and minority charges, donors and acceptors. Diffusion current and drift current. The open circuit pn junction, in forward bias and in reverse bias. Splicing capacity. Field effect and bipolar transistors. Circuit symbols. Output and input characteristics. Graphical analysis of transistor circuits. Operation of the n-channel enriched MOSFET (NMOS). Circuit symbols. Current-voltage characteristics. Graphic and analytical determination of the operating point and the transfer characteristic. Polarization point and dynamics of the signal. Constant VGS polarization, with source resistance, via current generator. Operation as an amplifier: -hybrid small signal model. Single-stage amplifier configurations: common-source, common-drain, common-gate amplifier. Common source amplifier with source resistor. p-channel enrichment MOSFET (PMOS). Depletion MOSFET. CMOS inverter. MOSFET operation as a switch, finite output resistance in saturation. MOSFET structure. Canal formation. Saturation. Channel length modulation. Body effect. Bipolar junction transistors (BJT) npn and pnp. Circuit symbols. Operating modes: in direct active region, in saturation and in interdiction. Current-voltage characteristics. Early effect. BJT operation for large signals. Continuous circuits. The BJT as an amplifier: -hybrid small signal model. Single-stage amplifier configurations: common-emitter, common-collector, common-base, common-emitter with emitter resistor. Polarization with single power supply, polarization with double power supply, polarization with source resistor, polarization with feedback resistor between collector and base, polarization with current generator. Two-transistor circuits: differential cell, darlington, helmet. The BJT as a switch: shutter speeds and power dissipation in saturation. Structure of the BJT. Physical phenomena underlying the functioning. BJT saturation. Operation of diodes and transistors in the switching regime. Recall of binary arithmetic. Elementary logic gates, truth table, latch, SR, JK, D, T flip-flops. Synthesis of logic functions on an And-Or-Inverter basis. Decoders, multiplexers, adders. Shift register. Counters
Prerequisites
Basic courses of Physics and Chemistry. The course of Elettrotecnica 1
Books
SEDRA-SMITH Microelectronic circuits
Frequency
In presence
Exam mode
Written test and oral interview.
Lesson mode
Direct teaching at the blackboard
  • Lesson code1014352
  • Academic year2024/2025
  • CourseElectrical Engineering
  • CurriculumIngegneria Elettrotecnica (percorso valido anche ai fini del conseguimento del doppio titolo italo-venezuelano)
  • Year3rd year
  • Semester1st semester
  • SSDING-INF/01
  • CFU9
  • Subject areaAttività formative affini o integrative