POWER ELECTRONICS LAB

Channel 1
GIULIO DE DONATO Lecturers' profile

Program - Frequency - Exams

Course program
Review of Semiconductor Devices Power Diodes: PiN, Schottky, and Merged PiN-Schottky Thyristor Silicon Power MOSFET IGBT Wide-Bandgap Semiconductor Materials for Power Electronics (SiC and GaN) SiC Schottky Diode SiC Power MOSFET GaN High-Electron-Mobility Transistor (HEMT)
Prerequisites
To understand and be able to apply the techniques described in the teaching, it is necessary to have taken the exams in Circuit Theory, Electronics and Electrical Measurements. Some topics in the program require knowledge of Fourier and Laplace series and transforms, as well as mathematical skills. These prerequisites are essential for the student who wants to profitably follow the course.
Books
N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics: Converters, Applications, and Design, 3rd ed., Hoboken, NJ: John Wiley & Sons, 2003. Kassakian, J. G., Perreault, D. J., Verghese, G. C., & Schlecht, M. F., Principles of Power Electronics, 2ª ed., Cambridge University Press, 2023 B. J. Baliga, Fundamentals of Power Semiconductor Devices, 2ª ed., Springer, 2019
Teaching mode
Hybrid teaching.
Frequency
the students are advised to follow the lectures.
Exam mode
The exam consists in evaluating a simulation project in PLECS.
Bibliography
B. J. Baliga, "Silicon Carbide Power Devices: Progress and Future Outlook," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 11, no. 3, pp. 2400-2411, June 2023 Lidow, A., de Rooji, M., Glaser, J., Pozo, A., Zhang, S., Palma, M., Reusch, D., Strydom, J., &, GaN Transistors for Efficient Power Conversion, 4ª ed., John Wiley & Sons, 2025 B. Zojer, F. Di Domenico, and E. Persson, Operation and Features of High-Voltage CoolGaN™ Transistors, Infineon Technologies Austria AG, White Paper, Version 1.0, Oct. 2024. [Online]. Available: https://www.infineon.com/ V. Veliadis and T. M. Jahns, “Monolithic Bidirectional Lateral GaN Switches Reinvigorate Power Electronics Applications,” IEEE Power Electronics Magazine, vol. 12, no. 1, pp. 22–28, Mar. 2025, doi: 10.1109/MPEL.2025.3528696. K. K. L. Leong and P. Das, CoolGaN™ Bidirectional Switch 650 V G5: Fundamentals and Design Considerations, Infineon Technologies AG, White Paper, Version 1.1_EN, May 2025. [Online]. Available: https://www.infineon.com/cms/en/product/power/gallium-nitride/gan-bidirectional-switch/hvgan- bidirectional-switch/ Monolithic Bidirectional Power Transistors, Infineon Technologies AG, White Paper, 2024.
Lesson mode
In presence teaching.
  • Lesson codeAAF2444
  • Academic year2025/2026
  • CourseElectrical Engineering
  • CurriculumElectrical Engineering for Digital Transition and Sustainable Power Systems
  • Year2nd year
  • Semester1st semester
  • CFU3